- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371105 > MH16S72DDFA-7 (Mitsubishi Electric Corporation) 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM PDF資料下載
參數(shù)資料
| 型號： | MH16S72DDFA-7 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| 中文描述： | 1207959552位（16,777,216字72位）同步動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 23/52頁 |
| 文件大?。?/td> | 1045K |
| 代理商： | MH16S72DDFA-7 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
MH16S72AMA -8,-10,-12
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
MITSUBISHI LSIs
( 23
MITSUBISHI
ELECTRIC
5. Mar.1997
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0128-0.0
[ Write Interrupted by Write ]
Burst write operation can be interrupted by new write of the same or the other bank.
Random column access is allowed. WRITE to WRITE interval is minimum 1 CK.
Write Interrupted by Write (BL=4)
CK
Command
A10
DQ
Write
Yi
0
0
Write
Yk
0
1
Dai0
Daj0
Daj1
Dbk0
Write
Yj
0
0
Dbk1 Dbk2
Write
Yl
0
0
Dal0
Dal1
Dal2
Dal3
[ Write Interrupted by Read ]
Burst write operation can be interrupted by read of the same or the other bank.
Random column access is allowed. WRITE to READ interval is minimum 1 CK. The
input data on DQ at the interrupting READ cycle is "don't care".
Write Interrupted by Read (BL=4, CL=3)
CK
Command
A10
DQ
Write
Yi
0
0
Qaj0
READ
Yj
0
0
Qaj1
Dai0
Dak0 Dak1
DQMB0-7
Write
Yk
0
0
READ
Yl
0
1
Qbl0
A0-9,11
BA0,1
A0-9,11
BA0,1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MH16S72DDFA-8 | 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72VJB-6 | 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72APHB-6 | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72APHB-7 | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
| MH16S72APHB-8 | 1,207,959,552-BIT (16,777,216 - WORD BY 72-BIT)Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH16S72DDFA-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72PHB-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
| MH16S72PHB-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72PHB-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
| MH16S72PHB-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。