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參數(shù)資料
| 型號(hào)： | MH32S72AQJA-7 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | ER 3C 3#16S PIN RECP |
| 中文描述： | 2415919104位（33554432 - Word的72位）同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁數(shù)： | 5/56頁 |
| 文件大?。?/td> | 917K |
| 代理商： | MH32S72AQJA-7 |
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2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72AQJA-7, -8
17/Mar./2000
MIT-DS-0371-0.2
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
BASIC FUNCTIONS
The MH32S72AQJA provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
precharge option,respectively.
To know the detailed definition of commands please see the command truth table.
/S
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
CK
define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
Read(READ) [/RAS =H,/CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA.First output
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,
READA
).
Write(WRITE) [/RAS =H, /CAS = /WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank
is deactivated after the burst write(auto-precharge,
WRITEA
).
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
PRE command deactivates the active bank indicated by BA. This command also
terminates burst read / write operation. When A10 =H at this command, both banks
are deactivated(precharge all,
PREA
).
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
PEFA command starts auto-refresh cycle. Refresh address including bank address
are generated internally. After this command, the banks are precharged automatically.
ACT command activates a row in an idle bank indicated by BA.
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MH32S72AQJA-8 | ER 3C 3#16S SKT RECP |
| MH32S72QJA-8 | 2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72BAFA-7 | Circular Connector; No. of Contacts:18; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:15-18 RoHS Compliant: No |
| MH32S72BAFA-8 | Circular Connector; No. of Contacts:19; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-19 RoHS Compliant: No |
| MH32S72AVJA-6 | ER 7C 5#16 2#12 SKT PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH32S72AQJA-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72AVJA-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72BAFA-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72BAFA-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH32S72BBFA-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
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