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參數(shù)資料
| 型號(hào)： | MH4S64BLG-8 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM |
| 中文描述： | 268435456位（4194304 -文字，64位）SynchronousDRAM |
| 文件頁數(shù)： | 28/55頁 |
| 文件大?。?/td> | 586K |
| 代理商： | MH4S64BLG-8 |
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MH4S64BLG -7,-8,-10
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
MITSUBISHI LSIs
( 28
MITSUBISHI
ELECTRIC
29.Oct.1998
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0227-0.5
DQM CONTROL
DQMB0-7 is a dual function signal defined as the data mask for writes and the output
disable for reads. During writes, DQMB0-7 masks input data word by word. DQMB0-7
to write mask latency is 0.
During reads, DQMB0-7 forces output to Hi-Z word by word. DQMB0-7 to output Hi-Z
latency is 2.
DQM Function
CK
Command
DQ
Write
D0
D2
D3
DQMB0-7
READ
Q0
Q1
Q3
masked by DQM=H
disabled by DQM=H
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PDF描述 |
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| MH4S64CBMD-10 | 268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
| MH4S64CBMD-10B | 268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
| MH4S64CBMD-12 | 268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
| MH4S64CBMD-12B | 268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
| MH4S64CBMD-15 | 268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH4S64CBMD-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
| MH4S64CBMD-10B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
| MH4S64CBMD-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
| MH4S64CBMD-12B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
| MH4S64CBMD-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM |
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