參數(shù)資料
型號: MH4V6445BXJJ-6S
廠商: Mitsubishi Electric Corporation
英文描述: HYPER PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
中文描述: 超頁模式268435456位(4194304字,64位)動態(tài)隨機存儲器
文件頁數(shù): 9/26頁
文件大小: 152K
代理商: MH4V6445BXJJ-6S
MH4V6445BXJJ-5,-6,-5S,-6S
HYPER PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
MITSUBISHI
ELECTRIC
( / 26 )
9
MITSUBISHI LSIs
Preliminary
Some of contents are subject
to change without notice.
MIT-DS-0233-0.0
24/Jul./1998
Limits
Min
Max
Parameter
CBR Self Refresh RAS low pulse width
Symbol
t
RASS
Unit
Min
Max
Min
Max
-5S
-6S
-7S
us
ns
ns
t
RPS
t
CHS
100
130
ns
100
104
- 50
100
84
- 50
ns
CBR Self Refresh RAS high precharge time
CBR Self Refresh RAS hold time
BURST REFRESH
< 128 ms >
BURST REFRESH
< 128 ms >
t
NS
t
SN
DISTRIBUTED REFRESH
< 128 ms >
t
NS
t
SN
(1) In case of CBR distributed refresh
SELF REFRESH ENTRY & EXIT CONDITIONS
The last / first full refresh cycles must be made within tNS / tSN before / after self refresh ,
on the condition of tNS
128 ms and tSN
128 ms.
(2) In case of burst refresh
The last / first full refresh cycles must be made within tNS / tSN before / after self refresh ,
on the condition of tNS
16ms and tSN
16 ms.
DISTRIBUTED REFRESH
< 128 ms >
SELF REFRESH SPECIFICATIONS
Self refresh devices are denoted by "S" after speed item,line -5S / -6S. The other characteristics
and requirements then below are same as normal device.
Symbol
ICC9(AV)*
Parameter
Limits
Typ
Min
Max
Unit
Test conditions
Average supply current
from Vcc Self-Refresh mode
/RAS=/CAS<0.2V
/OE=/W=A0~A12(A11)=Vcc-0.2V or
0.2V output=Vcc-0.2V,0.2V or open
μA
-5S,-6S
1600
ELECTRIC CHARACTERISTICS
(Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted) (Note 2)
(Note 6)
(Ta=0~70°C, Vcc=3.3V±0.3V, Vss=0V, unless otherwise noted ,see notes 13,14)
TIMING REQUIREMENTS
Unit
us
Self refresh period
Self refresh period
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