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參數(shù)資料
| 型號： | MH64D72KLG-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
| 中文描述： | 4831838208位（67108864 - Word的72位），雙數(shù)據(jù)速率同步DRAM模塊 |
| 文件頁數(shù)： | 5/38頁 |
| 文件大?。?/td> | 326K |
| 代理商： | MH64D72KLG-10 |
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MITSUBISHI LSIs
MITSUBISHI ELECTRIC
MH64D72KLG-75,-10
4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0389-1.1
20.Nov.2000
Preliminary Spec.
Some contents are subject to change without notice.
5
BASIC FUNCTIONS
The MH64D72KLG provides basic functions, bank (row) activate, burst read / write, bank (row)
precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS
and /WE at CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip
select, refresh option, and precharge option, respectively. To know the detailed definition of
commands, please see the command truth table.
/S0
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE0
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
CK0
define basic commands
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data
appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the
burst read (auto-precharge,
READA
)
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be
written is set by burst length. When A10 =H at this command, the bank is deactivated after
the burst write (auto-precharge,
WRITEA
).
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates
burst read /write operation. When A10 =H at this command, all banks are deactivated
(precharge all,
PREA
).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE0 =H]
REFA command starts auto-refresh cycle. Refresh address including bank address are
generated internally. After this command, the banks are precharged automatically.
/CK0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MH64D72KLG-75 | 4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
| MH64D72KLH-10 | 4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
| MH64D72KLH-75 | 4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
| MH64S64APFH-6 | 4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM |
| MH64S64APFH-6L | 4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH64D72KLG-75 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
| MH64D72KLH-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
| MH64D72KLH-75 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4,831,838,208-BIT (67,108,864-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
| MH64FAD | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator |
| MH64FAD-R | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator |
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