參數(shù)資料
型號： MHPA21010N
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： UMTS Band RF Linear LDMOS Amplifier
中文描述： UMTS波段射頻線性LDMOS的放大器
文件頁數(shù)： 1/8頁
文件大?。?/td> 145K
代理商： MHPA21010N
MHPA21010N
1
RF Device Data
Freescale Semiconductor
UMTS Band
RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in
50 ohm system
s operating in
the UMTS frequency band. A silicon FET design provides outstanding linearity
and gain. In addition, the excellent group delay and phase linearity characteris-
tics are ideal for digital modulation systems.
Typical W-CDMA Performance for V
DD
= 28 Volts, V
bias
= 8 Volts,
I
DQ
= 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels
at
±
5 MHz, ACPR Measured in 3.84 MHz Bandwidth.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1,
64 DTCH.
Adjacent Channel Power:
-
50 dBc @ 30 dBm, 5 MHz Channel Spacing
Power Gain: 23.7 dB Min (@ f = 2140 MHz)
0.2 dB Typical Gain Flatness
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
N Suffix Indicates Lead-Free Terminations
Table 1. Maximum Ratings
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power (Single Carrier CW)
P
in
+20
dBm
Storage Temperature Range
T
stg
- 40 to +100
°
C
Operating Case Temperature Range
T
C
- 20 to +100
°
C
Quiescent Bias Current
I
DQ
750
mA
Table 2. Electrical Characteristics
(V
DD
= 28 Vdc, V
BIAS
8 V Set for Supply Current of 550 mA, T
C
= 25
°
C, 50
Ω
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
—
550
—
mA
Power Gain
(f = 2140 MHz)
G
p
23.7
25
—
dB
Gain Flatness
(f = 2110 - 2170 MHz)
G
F
—
0.2
0.6
dB
Power Output @ 1 dB Comp.
(f = 2140 MHz)
P1dB
—
41.5
—
dBm
Input VSWR
(f = 2110 - 2170 MHz)
VSWR
in
—
1.5:1
2:1
Noise Figure
(f = 2140 MHz)
NF
—
—
10
dB
Adjacent Channel Power Rejection @ 30 dBm Avg., 3.84 MHz BW,
5 MHz Channel Spacing
ACPR
—
-55
- 50
dBc
Document Number: MHPA21010N
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
MHPA21010N
2110-2170 MHz
10 W, 23.7 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP-02, STYLE 3
Freescale Semiconductor, Inc., 2006. All rights reserved.
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