參數(shù)資料
型號(hào): MHPM6B10N120SS
廠商: MOTOROLA INC
元件分類: IGBT 晶體管
英文描述: Hybrid Power Module
中文描述: 15 A, 1200 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 265K
代理商: MHPM6B10N120SS
3
Motorola IGBT Device Data
Characteristic
Unit
Max
Typ
Min
Symbol
INDUCTIVE SWITCHING CHARACTERISTICS
(TJ = 25
°
C) – continued
Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
Eoff
1.1
1.7
3.0
1.4
2.1
3.5
mJ
Diode Reverse Recovery Time (IF = IFmax, V = 600 V)
10A120
15A120
25A120
trr
95
110
124
ns
Peak Reverse Recovery Current (IF = IFmax, V = 600 V)
10A120
15A120
25A120
Irrm
8.0
9.7
11.5
A
Diode Stored Charge (IF = IFmax, V = 600 V)
10A120
15A120
25A120
Qrr
550
600
740
nC
INDUCTIVE SWITCHING CHARACTERISTICS
(TJ = 125
°
C)
Characteristic
Symbol
Min
Typ
Max
Unit
Turn–On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
td(on)
160
220
310
ns
Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
tr
93
110
160
ns
Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
td(off)
680
850
1140
ns
Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
tf
51
60
76
ns
Turn–On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
Eon
2.0
3.6
6.1
mJ
Turn–Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V)
10A120
15A120
25A120
Eoff
1.5
2.4
4.2
mJ
Diode Reverse Recovery Time (IF = IFmax, V = 600 V)
10A120
15A120
25A120
trr
160
210
250
ns
Peak Reverse Recovery Current (IF = IFmax, V = 600 V)
10A120
15A120
25A120
Irrm
11.0
14.1
17.4
A
Diode Stored Charge (IF = IFmax, V = 600 V)
10A120
15A120
25A120
Qrr
995
1770
2460
nC
THERMAL CHARACTERISTICS
(Each Die)
Thermal Resistance — IGBT
10A120
15A120
25A120
RJC
1.1
0.89
0.68
1.3
1.1
0.85
°
C/W
Thermal Resistance — Diode
10A120
15A120
25A120
RJC
2.8
2.0
1.6
3.5
2.5
2.0
°
C/W
相關(guān)PDF資料
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