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參數(shù)資料
| 型號(hào)： | MHPM7A30E60DC3 |
| 廠(chǎng)商： | MOTOROLA INC |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | Hybrid Power Module |
| 中文描述： | 30 A, 600 V, N-CHANNEL IGBT |
| 封裝： | CASE 464D-01, POWER MODULE-24 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | MHPM7A30E60DC3 |
3
Motorola IGBT Device Data
TYPICAL CHARACTERISTICS
Figure 1. Forward Characteristics —
Input Rectifier
Figure 2. Forward Characteristics —
Free–Wheeling Diode
Figure 3. Forward Characteristics, TJ = 25
°
C
Figure 4. Forward Characteristics, TJ = 125
°
C
Figure 5. Gate–Emitter Zener Diode
Clamp Characteristic
Figure 6. Recommended Gate Drive Circuit
–20
0
–30
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
5.0
–1.0
–2.0
–3.0
–4.0
–5.0
–10
10
30
20
0
1.0
I
2.0
3.0
4.0
MBRS1100T3
MBRS1100T3
MBRS1100T3
+15 V
MC33153
120
RG(on)
20
RG(off)
VF, FORWARD VOLTAGE (VOLTS)
1.2
0
60
0
0.4
0.6
10
20
30
I
0.2
1.0
40
50
0.8
TJ = 125
°
C
5.0
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
60
40
I
0
3.0
0.5
2.0
3.5
4.0
VGE = 18 V
4.5
15 V
9.0 V
30
10
20
50
1.0
1.5
2.5
12 V
0
VF, FORWARD VOLTAGE (VOLTS)
60
0
0.5
1.0
1.5
2.0
2.5
20
10
30
40
50
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
5.0
0
60
40
0
3.0
0.5
2.0
3.5
4.0
VGE = 18 V
4.5
15 V
9.0 V
30
10
20
50
1.0
1.5
2.5
12 V
I
25
°
C
TJ = 125
°
C
25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 25
°
C
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