參數(shù)資料
型號(hào): MHVIC910HNR2
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: 921 MHz-960 MHz SiFET RF Integrated Power Amplifier
中文描述: 921兆赫,960兆赫?qǐng)鲂?yīng)管射頻集成功率放大器
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 333K
代理商: MHVIC910HNR2
6
RF Device Data
Freescale Semiconductor
MHVIC910HNR2
TYPICAL CHARACTERISTICS
Figure 11. Input Return Loss versus Frequency
P
out
= 10 W
Figure 12. Input Return Loss versus Frequency
P
out
= P1dB
Figure 13. Error Vector Magnitude versus I
DQ
Total
Figure 14. Adjacent Channel Power Ratio
versus I
DQ
Total
Figure 15. Output Power versus Supply Voltage
E
Figure 16. Output Power versus Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
P
970
22
12
910
14
16
18
20
960
950
940
930
920
V
DD
= 26 Vdc
30
°
C
T
C
= +85
°
C
+25
°
C
970
22
12
910
14
16
18
20
960
950
940
930
920
30
°
C
T
C
= +85
°
C
+25
°
C
200
0
4.5
140
P
out
= 2.0 W (RMS)
V
DD
= 26 Vdc
f = 880 MHz
4
3.5
3
2.5
2
1.5
1
0.5
190
180
170
160
150
0.5 W (RMS)
0.1 W (RMS)
200
90
50
140
55
60
65
70
75
80
85
190
180
170
160
150
2.0 W (RMS)
V
DD
= 26 Vdc
f = 880 MHz
0.5 W (RMS)
0.1 W (RMS)
= 400 kHz
= 600 kHz
P
out
= 2.0 W (RMS)
0.5 W (RMS)
0.1 W (RMS)
26
0
8
16
I
DQ total
= 180 mA
f = 880 MHz
P
in
= 1.0 mW
0.8 mW
0.6 mW
0.4 mW
7
6
5
4
3
2
1
25
24
23
22
21
20
19
18
17
26
0
8
16
I
DQ total
= 170 mA
f = 880 MHz
P
in
= 1.0 mW
0.8 mW
0.6 mW
0.4 mW
7
6
5
4
3
2
1
25
24
23
22
21
20
19
18
17
f, FREQUENCY(MHz)
f, FREQUENCY(MHz)
I
DQ
, DRAIN QUIESCENT CURRENT (mA)
V
DD
, SUPPLY VOLTAGE (VOLTS)
I
A
P
I
V
DD
= 26 Vdc
I
DQ
, DRAIN QUIESCENT CURRENT (mA)
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