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參數(shù)資料
| 型號： | MHVIC910HR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | 921 MHz − 960 MHz SiFET RF Integrated Power Amplifier |
| 中文描述： | 921 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, CASE 978-03, FP-16 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 222K |
| 代理商： | MHVIC910HR2 |
MHVIC910HR2
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 978
03
ISSUE B
PFP
16
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
MIN
2.000
0.025
1.950
6.950
4.372
8.850
6.950
4.372
0.466
0.250 BSC
0.300
0.300
0.180
0.180
0.800 BSC
0
0.200
0.200
0.100
MAX
2.300
0.100
2.100
7.100
5.180
9.150
7.100
5.180
0.720
MILLIMETERS
0.432
0.375
0.279
0.230
0.600
7
aaa
bbb
ccc
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE H IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE H.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
BOTTOM VIEW
D1
E2
16
9
8
1
e
S
B
M
bbb
C
D
X 45
h
e
1
E1
8X
E
A2
A
SEATING
PLANE
DATUM
PLANE
GAUGE
PLANE
L
1.000
0.039
L
W
W
A1
ccc C
DETAIL Y
SECT W
W
c
c1
b1
b
éé
S
A
M
aaa
C
A
B
H
C
Y
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相關代理商/技術參數(shù) |
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| MHVIC915R2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifier |
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| MHV-M-10 | 制造商: 功能描述: 制造商:COMPONENT ENTERPRISES 功能描述: 制造商:undefined 功能描述: |
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