- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371110 > MHVIC915R2 (MOTOROLA INC) 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier PDF資料下載
參數(shù)資料
| 型號(hào)： | MHVIC915R2 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier |
| 中文描述： | 746 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, CASE 978-03, PFP-16 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 652K |
| 代理商： | MHVIC915R2 |
MHVIC915R2
2
MOTOROLA RF DEVICE DATA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
–0.5, +15
Vdc
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Driver Application
(P
out
= 0.2 W CW)
Stage 1, 27 Vdc, I
DQ
= 80 mA
Stage 2, 27 Vdc, I
DQ
= 120 mA
Output Application
(P
out
= 2.5 W CW)
Stage 1, 27 Vdc, I
DQ
= 80 mA
Stage 2, 27 Vdc, I
DQ
= 120 mA
GSM Application
(P
out
= 15 W CW)
Stage 1, 26 Vdc, I
DQ
= 50 mA
Stage 2, 26 Vdc, I
DQ
= 140 mA
R
θ
JC
5.07
3.73
3.41
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C4 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22–A113
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CDMA FUNCTIONAL TESTS
(In Motorola CDMA Test Fixture, 50
ο
hm system) V
DS
= 27 V, I
DQ1
= 80 mA, I
DQ2
= 120 mA, 880 MHz,
1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward
Common–Source Amplifier Power Gain (P
out
= 23 dBm)
G
ps
29
31
—
dB
Power Added Efficiency (P
out
= 34 dBm)
η
—
21
—
%
Input Return Loss (P
out
= 23 dBm)
IRL
—
–12
–9
dB
Adjacent Channel Power Ratio (P
out
= 23 dBm) @ 750 kHz offset in 30 kHz BW
ACPR
—
–60
–55
dBc
Adjacent Channel Power Ratio (P
out
= 34 dBm) @ 750 kHz offset in 30 kHz BW
ACPR
—
–50
—
dBc
Gain Flatness @ P
out
= 23 dBm (865 MHz to 895 MHz)
G
F
—
0.2
0.4
dB
Bias Sense FET Drain Current
V
BSD
= 27 V
V
BIAS
BSG
= V
BIAS2 Q2
@ I
DQ2
= 120 mA
I
BSD
0.8
1.2
1.6
mA
(continued)
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MHW105 | Hybrid Power Module |
| MHW1134 | Low Distortion Wideband Amplifiers |
| MHW1184 | Low Distortion Wideband Amplifiers |
| MHW1224 | Low Distortion Wideband Amplifiers |
| MHW1244 | Low Distortion Wideband Amplifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MHVIC915R2/D | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:746-960 MHz RF LDMOS Wideband Integrated Power Amplifier |
| MHV-M-10 | 制造商: 功能描述: 制造商:COMPONENT ENTERPRISES 功能描述: 制造商:undefined 功能描述: |
| MHV-MHV-1A | 制造商:undefined 功能描述: |
| MHV-RPL-M-59 | 制造商:ITT Interconnect Solutions 功能描述:MHV-RPL-M-59 - Bulk |
| MHW | 制造商:CIT 制造商全稱(chēng):CIT Relay & Switch 功能描述:CIT SWITCH |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。