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參數(shù)資料
| 型號(hào)： | MHW1910-1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | RF Power Amplifier(RF功率放大器) |
| 中文描述： | 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | CASE 301AW-02, 4 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | MHW1910-1 |
1
MHW1910–1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1999
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics
Output Power = 14 Watts CW Typ
Power Gain = 26 dB Typ @ 10 Watts
Efficiency = 34% Min @ 10 Watts
50
Input/Output System
Designed for GSM Linearity Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Supply Voltage
VS
Vbias
Pin
Pout
TC
28
Vdc
DC Bias Voltage
28
Vdc
RF Input Power
21
dBm
RF Output Power
20
W
Operating Case Temperature Range
– 10 to +90
°
C
Storage Temperature Range
Tstg
– 30 to +100
°
C
ELECTRICAL CHARACTERISTICS
(TC =
+
25
°
C, VS = 26 Vdc; Vbias = 5 Vdc; 50
system, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
1930
—
1990
MHz
Quiescent Current (Pin = 0 mW)
Bias Current
IDQ
Ibias
P1dB
GP
η
100
—
150
mA
—
—
2
mA
Output Power at 1 dB Compression
10
14
—
W
Power Gain (Pout = 10 W)
Efficiency (Pout = 10 W)
Input VSWR
24
26
28
dB
34
—
—
%
VSWRin
H2
H3
IMDr
—
—
1.8:1
—
Harmonics at 2fo
Harmonics at 3fo
Reverse IMD; Pout = 10 W; Preverse = –40 dBc
(F1 = F0
±
200 kHz @ –40 dBc)
—
—
– 35
dBc
—
—
– 45
dBc
—
—
– 50
dBc
Load Mismatch Stress
Load VSWR = 5:1, All Phase Angles
ψ
No Degradation in
Output Power
Stability (Pout = 10 mW to 10 W, VS
≤
26 Vdc)
Load VSWR = 5:1, All Phase Angles
—
All Spurious Outputs More Than
60 dB Below Desired Signal
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MHW1910/D
SEMICONDUCTOR TECHNICAL DATA
10 W, 1930–1990 MHz
RF POWER AMPLIFIER
CASE 301AW–02, STYLE 1
REV 1
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