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MHW5182A
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed specifically for 450 MHz CATV applications. Features ion–im-
planted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization
system.
Specified for 53– and 60–Channel Performance
Broadband Power Gain
@ f = 40–450 MHz
Gp = 18.2 dB (Typ) @ 50 MHz
19.0 dB (Typ) @ 450 MHz
Broadband Noise Figure
NF = 6.5 dB (Max)
Superior Gain, Return Loss and DC Current Stability with Temperature
All Gold Metallization
7.0 GHz Ion–Implanted Transistors
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Vin
VCC
TC
Tstg
+70
dBmV
DC Supply Voltage
+28
Vdc
Operating Case Temperature Range
–20 to +100
°
C
Storage Temperature Range
–40 to +100
°
C
ELECTRICAL CHARACTERISTICS
(VCC = 24 Vdc, TC = +30
°
C, 75
system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
40
—
450
MHz
Power Gain — 50 MHz
Gp
Gp
S
17.8
18.2
18.8
dB
Power Gain — 450 MHz
18.5
19
20
dB
Slope
0.3
—
1.5
dB
Gain Flatness (Peak To Valley)
—
—
0.2
0.4
dB
Return Loss — Input/Output
(Zo = 75 Ohms)
40–450 MHz
IRL/ORL
18
—
—
dB
Second Order Intermodulation Distortion
(Vout = +46 dBmV per ch., Ch 2, M6, M15)
(Vout = +46 dBmV per ch., Ch 2, M13, M22)
IMD
—
—
–85
–80
—
–72
dB
Cross Modulation Distortion
(Vout = +46 dBmV per ch.)
53–Channel FLAT
60–Channel FLAT
XMD53
XMD60
—
—
–62
–61
—
–59
dB
Composite Triple Beat
(Vout = +46 dBmV per ch.)
53–Channel FLAT
60–Channel FLAT
CTB53
CTB60
—
—
–64
–62
—
–61
dB
DIN (European Applications Only)*
300 MHz — (CH V + Q – P @ W)
400 MHz— (CH M8 + M15 – M9 @ M14)
450 MHz — (CH M20 + M23 – M22 @ M21)
DIN1
DIN2
DIN3
—
—
—
126
126
125
—
—
—
dB
μ
V**
Noise Figure (f = 450 MHz)
NF
—
5.5
6.5
dB
DC Current
IDC
—
210
240
mA
Order this document
by MHW5182A/D
SEMICONDUCTOR TECHNICAL DATA
18 dB GAIN
450 MHz
60–CHANNEL
CATV INPUT/OUTPUT
TRUNK AMPLIFIER
CASE 714–06, STYLE 1