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參數(shù)資料
| 型號(hào)： | MIC4429 |
| 廠商： | Micrel Semiconductor,Inc. |
| 英文描述： | 6A-Peak Low-Side MOSFET Driver(最大峰值輸出電流6A 低邊MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器) |
| 中文描述： | 第6A峰值低側(cè)MOSFET驅(qū)動(dòng)器（最大峰值輸出電流6A條低邊馬鞍山場(chǎng)效應(yīng)管驅(qū)動(dòng)器） |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 96K |
| 代理商： | MIC4429 |
5-40
April 1998
MIC4420/4429
Micrel
where:
I
H
=
I
L
=
D = fraction of time input is high (duty cycle)
V
S
=
power supply voltage
quiescent current with input high
quiescent current with input low
Transition Power Dissipation
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for a
very brief interval, both the N- and P-channel MOSFETs in
the output totem-pole are ON simultaneously, and a current
is conducted through them from V
+S
to ground. The transi-
tion power dissipation is approximately:
P
T
= 2 f V
S
(As)
where (As) is a time-current factor derived from the typical
characteristic curves.
Total power (P
D
) then, as previously described is:
P
D
= P
L
+ P
Q
+P
T
Definitions
C
L
=
Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f =
Operating Frequency of the driver in Hertz
I
H
=
Power supply current drawn by a driver when
both inputs are high and neither output is loaded.
I
L
=
Power supply current drawn by a driver when
both inputs are low and neither output is loaded.
I
D
=
Output current from a driver in Amps.
P
D
=
Total power dissipated in a driver in Watts.
P
L
=
Power dissipated in the driver due to the driver’s
load in Watts.
P
Q
=
Power dissipated in a quiescent driver in Watts.
P
T
=
Power dissipated in a driver when the output
changes states (“shoot-through current”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers
is shown by the "Typical Characteristic Curve :
Crossover Area vs. Supply Voltage and is in
ampere-seconds. This figure must be multiplied
by the number of repetitions per second (fre-
quency) to find Watts.
R
O
=
Output resistance of a driver in Ohms.
V
S
=
Power supply voltage to the IC in Volts.
Capacitive Load Power Dissipation
Dissipation caused by a capacitive load is simply the energy
placed in, or removed from, the load capacitance by the
driver. The energy stored in a capacitor is described by the
equation:
E = 1/2 C V
2
As this energy is lost in the driver each time the load is
charged or discharged, for power dissipation calculations
the 1/2 is removed. This equation also shows that it is good
practice not to place more voltage on the capacitor than is
necessary, as dissipation increases as the square of the
voltage applied to the capacitor. For a driver with a capaci-
tive load:
P
L
= f C (V
S
)
2
where:
f = Operating Frequency
C = Load Capacitance
V
S
= Driver Supply Voltage
Inductive Load Power Dissipation
For inductive loads the situation is more complicated. For
the part of the cycle in which the driver is actively forcing
current into the inductor, the situation is the same as it is in
the resistive case:
P
L1
= I
2
R
O
D
However, in this instance the R
O
required may be either the
on resistance of the driver when its output is in the high
state, or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is still
only half the story. For the part of the cycle when the
inductor is forcing current through the driver, dissipation is
best described as
P
L2
= I V
D
(1-D)
where V
D
is the forward drop of the clamp diode in the driver
(generally around 0.7V). The two parts of the load dissipa-
tion must be summed in to produce P
L
P
L
= P
L1
+ P
L2
Quiescent Power Dissipation
Quiescent power dissipation (P
Q
, as described in the input
section) depends on whether the input is high or low. A low
input will result in a maximum current drain (per driver) of
≤
0.2mA; a logic high will result in a current drain of
≤
2.0mA.
Quiescent power can therefore be found from:
P
Q
= V
S
[D I
H
+ (1-D) I
L
]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MIC4429BN | 6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| MIC4429CM | 100000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| MIC4429CN | 100000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| MIC4429CT | 150000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| MIC4422 | 9A-Peak Low-Side MOSFET Driver(最大峰值輸出電流9A 低邊MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC4429BM | 功能描述:IC DRIVER MOSFET 6A LS 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC4429BM TR | 功能描述:IC DRIVER MOSFET 6A LS 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC4429BMM | 功能描述:IC DRIVER MOSFET 6A LS 8-MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC4429BMM TR | 功能描述:IC DRIVER MOSFET 6A LS 8-MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC4429BMTR | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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