- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383611 > MIC4452CT (MICREL INC) 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process PDF資料下載
參數(shù)資料
| 型號： | MIC4452CT |
| 廠商： | MICREL INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| 中文描述： | 12 A BUF OR INV BASED MOSFET DRIVER, PSFM5 |
| 封裝： | TO-220, 5 PIN |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 105K |
| 代理商： | MIC4452CT |
5-78
April 1998
MIC4451/4452
Micrel
driver. The energy stored in a capacitor is described by the
equation:
E = 1/2 C V
2
As this energy is lost in the driver each time the load is
charged or discharged, for power dissipation calculations the
1/2 is removed. This equation also shows that it is good
practice not to place more voltage on the capacitor than is
necessary, as dissipation increases as the square of the
voltage applied to the capacitor. For a driver with a capacitive
load:
P
L
= f C (V
S
)
2
where:
f = Operating Frequency
C = Load Capacitance
V
S
= Driver Supply Voltage
Inductive Load Power Dissipation
For inductive loads the situation is more complicated. For the
part of the cycle in which the driver is actively forcing current
into the inductor, the situation is the same as it is in the
resistive case:
P
L1
= I
2
R
O
D
However, in this instance the R
O
required may be either the
on resistance of the driver when its output is in the high state,
or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is still
only half the story. For the part of the cycle when the inductor
is forcing current through the driver, dissipation is best
described as
P
L2
= I V
D
(1 – D)
where V
D
is the forward drop of the clamp diode in the driver
(generally around 0.7V). The two parts of the load dissipation
must be summed in to produce P
L
P
L
= P
L1
+ P
L2
Quiescent Power Dissipation
Quiescent power dissipation (P
Q
, as described in the input
section) depends on whether the input is high or low. A low
input will result in a maximum current drain (per driver) of
≤
0.2mA; a logic high will result in a current drain of
≤
3.0mA.
Quiescent power can therefore be found from:
P
Q
= V
S
[D I
H
+ (1 – D) I
L
]
where:
I
H
= quiescent current with input high
I
L
=
quiescent current with input low
D = fraction of time input is high (duty cycle)
V
S
=
power supply voltage
Transition Power Dissipation
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for a
very brief interval, both the N- and P-channel MOSFETs in
the output totem-pole are ON simultaneously, and a current
is conducted through them from V
S
to ground. The transition
power dissipation is approximately:
P
T
= 2 f V
S
(As)
where (As) is a time-current factor derived from the typical
characteristic curve “Crossover Energy vs. Supply Voltage.”
Total power (P
D
) then, as previously described is:
P
D
= P
L
+ P
Q
+ P
T
Definitions
C
L
=
Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f =
Operating Frequency of the driver in Hertz
I
H
= Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
I
L
=
Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
I
D
= Output current from a driver in Amps.
P
D
=
Total power dissipated in a driver in Watts.
P
L
=
Power dissipated in the driver due to the driver’s
load in Watts.
P
Q
= Power dissipated in a quiescent driver in Watts.
P
T
=
Power dissipated in a driver when the output
changes states (“shoot-through current”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers is
stated in Figure 7 in ampere-nanoseconds. This
figure must be multiplied by the number of repeti-
tions per second (frequency) to find Watts.
R
O
= Output resistance of a driver in Ohms.
V
S
=
Power supply voltage to the IC in Volts.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MIC4467 | Quad 1.2A-Peak Low-Side MOSFET Driver(四輸出 最大峰值輸出電流1.2A 低邊MOS場效應(yīng)管驅(qū)動器) |
| MIC4467BN | Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS |
| MIC4467BWM | Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS |
| MIC4467CN | Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS |
| MIC4467CWM | Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC4452CTL3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MIC4452YM | 功能描述:功率驅(qū)動器IC 12A Hi-Speed, Hi-Current Single MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC4452YM TR | 功能描述:功率驅(qū)動器IC 12A Hi-Speed, Hi-Current Single MOSFET Driver (Lead Free) RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MIC4452YM | 制造商:Micrel Inc 功能描述:MOSFET Driver IC |
| MIC4452YMTR | 制造商:Micrel 功能描述:MOSFET Driver 12A 1-Out Lo Side Non-Inv |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。