參數資料
型號: MIC5013BM
廠商: MICREL INC
元件分類: 功率晶體管
英文描述: FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
中文描述: BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝: SOIC-8
文件頁數: 7/16頁
文件大?。?/td> 153K
代理商: MIC5013BM
July 2000
7
MIC5013
MIC5013
Applications Information
(Continued)
Micrel
Fault
V+
Gate
1
2
3
4
8
MIC5013
Input
Gnd
7
6
5
Thresh
Sense
Source
IRF540
10μF
10k
10m
IRC 4LPW-5
Figure 2. Low-Side Driver with
Current Shunt
LOAD
Control Input
=7 to 15V
V+
+
(International Resistive Company)
V
LOAD
I =20A (trip current)
L
V
TRIP
= 200mV
V
TRIP
L
2200
1000
V
TRIP
For this example:
R =
R =
R
R
TH
Fault
V+
Gate
1
2
3
4
8
MIC5013
Input
Gnd
7
6
5
Thresh
Sense
Source
=24V
IRF541
10μF
100
20k
24k
18m
IRC 4LPW-5*
R1
Figure 3. High-Side Driver
with Current Shunt
LOAD
Control Input
V+
+
*International Resistive Company
R2
R1=
R2=100
R =
R =
1mA
V
100mV+
2200
1000
V
TRIP
+
I
L
For this example:
I =10A (trip current)
V =100mV
V
TRIP
R
R
TH
Circuit Topologies
The MIC5013 is suited for use in high- or low-side driver
applications with over-current protection for both current-
sensing and standard MOSFETs. In addition, the MIC5013
works well in applications where, for faster switching times,
the supply is bootstrapped from the MOSFET source out-
put. Low voltage, high-side drivers (such as shown in the
Test Circuit) are the slowest; their speed is reflected in the
gate turn-on time specifications. The fastest drivers are the
low-side and bootstrapped high-side types. Load current
switching times are often much faster than the time to full
gate enhancement, depending on the circuit type, the
MOSFET, and the load. Turn-off times are essentially the
same for all circuits (less than 10
μ
s to V
GS
= 1V). The choice
of one topology over another is based on a combination of
considerations including speed, voltage, and desired sys-
tem characteristics. Each topology is described in this
section. Note that I
L
, as used in the design equations, is the
load current that just trips the over-current comparator.
Low-Side Driver with Current Shunt
(Figure 2). The over-
current comparator monitors RS and trips if I
L
×
R
S
exceeds
V
TRIP
. R is selected to produce the desired trip voltage.
As a guideline, keep V
TRIP
within the limits of 100mV and
500mV (R
TH
= 3.3k
to 20k
). Thresholds at the high end
offer the best noise immunity, but also compromise switch
drop (especially in low voltage applications) and power
dissipation.
The trip current is set higher than the maximum expected
load current
typically twice that value. Trip point accuracy
is a function of resistor tolerances, comparator offset (only
a few millivolts), and threshold bias voltage (V2). The values
shown in Figure 2 are designed for a trip current of 20
amperes. It is important to ground pin 4 at the current shunt
R
S
, to eliminate the effects of ground resistance.
A key advantage of the low-side topology is that the load
supply is limited only by the MOSFET BVDSS rating.
Clamping may be required to protect the MOSFET drain
terminal from inductive switching transients. The MIC5013
相關PDF資料
PDF描述
MIC5013BN FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
MIC5020 Replaced by PTN78060W :
MIC5020BM Replaced by PTN78060W :
MIC5020BN Replaced by PTN78060W :
MIC5021 Replaced by PTN78060W :
相關代理商/技術參數
參數描述
MIC5013BM TR 功能描述:IC DRIVER MOSF HI/LOW SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數:1 輸出數:1 高端電壓 - 最大(自引導啟動):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5013BN 功能描述:IC DRIVER MOSFET HI/LO SIDE 8IP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數:1 輸出數:1 高端電壓 - 最大(自引導啟動):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應商設備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5013YM 功能描述:功率驅動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MIC5013YM TR 功能描述:功率驅動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MIC5013YN 功能描述:功率驅動器IC High Side MOSFET Predriver - Lead Free RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube