參數(shù)資料
型號: MIC5020
廠商: Micrel Semiconductor,Inc.
英文描述: Replaced by PTN78060W :
中文描述: 電流感應(yīng)低側(cè)MOSFET驅(qū)動(dòng)器
文件頁數(shù): 3/7頁
文件大小: 99K
代理商: MIC5020
MIC5020
Absolute Maximum Ratings
Supply Voltage (V
DD
) ..................................................+55V
Input Voltage ................................................ –0.5V to +15V
Sense Differential Voltage..........................................
±
6.5V
Sense + or Sense – to Gnd.......................... –0.5V to +50V
Fault Voltage ...............................................................+50V
Current into Fault .......................................................50mA
Timer Voltage (C
T
) .....................................................+5.5V
Micrel
5-164
October 1998
Electrical Characteristics
T
A
= 25
°
C, Gnd = 0V, V
DD
= 12V, Sense +,– = 0V, Fault = Open, C
T
= Open, Gate C
L
= 1500pF unless otherwise specificed
Symbol
Parameter
Condition
Min
Typ
Max
Units
D.C. Supply Current
V
DD
= 12V, Input = 0V
V
DD
= 50V, Input = 0V
V
DD
= 12V, Input = 5V
V
DD
= 50V, Input = 5V
0.8
2
mA
2
10
mA
0.8
2
mA
4
25
mA
Input Threshold
0.8
1.4
2.0
V
Input Hysteresis
0.1
V
Input Pull-Down Current
Input = 5V
10
20
40
μ
A
Fault Output
Saturation Voltage
Fault Current = 1.6mA
Note 1
0.15
0.4
V
Fault Output Leakage
Fault = 50V
–1
0.01
+1
μ
A
Current Limit Threshold
Note 2
30
50
70
mV
Gate On Voltage
V
DD
= 12V
V
DD
= 50V
Sense Differential > 70mV
10
11
V
14
15
18
V
t
G(ON)
t
G(OFF)
t
DLH
t
R
t
DLH
t
F
f
max
Gate On Time, Fixed
2
5
10
μ
s
Gate Off Time, Adjustable
Sense Differential > 70mV, C
T
= 0pF
Note 3
10
20
50
μ
s
Gate Turn-On Delay
400
800
ns
Gate Rise Time
Note 4
700
1500
ns
Gate Turn-Off Delay
Note 5
900
1500
ns
Gate Fall Time
Note 6
500
1500
ns
Maximum Operating Frequency
Note 7
100
150
kHz
Note 1
Note 2
Note 3
Note 4
Note 5
Note 6
Note 7
Voltage remains low for time affected by C
T
.
When using sense MOSFETs, it is recommended that R
SENSE
< 50
. Higher values may affect the sense MOSFET’s current transfer ratio.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 11V (Gate ON voltage) to 10V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V from 2V.
Frequency where gate on voltage reduces to 10V with 50% input duty cycle.
Operating Ratings
Supply Voltage (V
DD
) .................................... +11V to +50V
Temperature Range
SOIC ...................................................... –40
°
C to +85
°
C
Plastic DIP.............................................. –40
°
C to +85
°
C
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