參數(shù)資料
型號(hào): MIC5021
廠商: Micrel Semiconductor,Inc.
英文描述: Replaced by PTN78060W :
中文描述: 高速高邊MOSFET驅(qū)動(dòng)器
文件頁數(shù): 7/9頁
文件大?。?/td> 132K
代理商: MIC5021
October 1998
5-175
MIC5021
Micrel
5
The diode should have a peak forward current rating greater
than the load current. This is because the current through the
diode is the same as the load current at the instant the
MOSFET is turned off.
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
TTL Input
R
SENSE
(< 0.08
)
N-Channel
Power MOSFET
(IRF540)
+20V to +36V
MIC5021
1
2
3
4
8
7
6
5
10μF
Solenoid
(24V, 47
)
0.01
μF
Schottky
Diode
(1N5822)
(+24V)
Figure 5. Solenoid Driver
with Current Sensing
Sense Pin Considerations
The sense pins of the MIC5021 are sensitive to negative
voltages. Forcing the sense pins much below –0.5V effec-
tively reverses the supply voltage on portions of the driver
resulting in unpredictable operation or damage.
Turnoff
0V
Negative
~V
DD
V
DD
Input
C
T
Gate
MIC5021
1
2
3
4
8
7
6
5
Inductive
Load
Current flows from ground (0V)
through the diodes to the load
during negative transcients.
Forward drop across diodes
allows leads to go negative.
Figure 6. Inductive Load Turnoff
Figure 6 shows current flowing out of the sense leads of an
MIC5021 during a negative transient (inductive kick). Internal
Schottky diodes attempt to limit the negative transient by
maintaining a low forward drop.
Although the internal Schottky diodes can protect the driver
in low-current resistive applications, they are inadequate for
inductive loads or the lead inductance in high-current resis-
tive loads. Because of their small size, the diodes’ forward
voltage drop quickly exceeds 0.5V as current increases.
Circuits Without Current Sensing
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
+
TTL Input
Load
N-Channel
Power MOSFET
V+
MIC5021
1
2
3
4
8
7
6
5
10μF
0.01
μF
Figure 4a. Connecting Sense to Source
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
+
TTL Input
Load
N-Channel
Power MOSFET
V+
MIC5021
1
2
3
4
8
7
6
5
10μF
0.01
μF
Figure 4b. Connecting Sense to Supply
Current sensing may be omitted by connecting the
SENSE
+
and
SENSE
– pins to the source of the MOSFET or to the
supply. Connecting the
SENSE
pins to the supply is preferred
for inductive loads. Do not connect the
SENSE
pins to ground.
Inductive Load Precautions
Circuits controlling inductive loads, such as solenoids (Figure
5) and motors, require precautions when controlled by the
MIC5021. Wire wound resistors, which are sometimes used
to simulate other loads, can also show significant inductive
properties.
An inductive load releases stored energy when its current
flow is interrupted (when the MOSFET is switched off). The
voltage across the inductor reverses and the inductor at-
tempts to force current flow. Since the circuit appears open
(the MOSFET appears as a very high resistance) a very large
negative voltage occurs across the inductor.
Limiting Inductive Spikes
The voltage across the inductor can be limited by connecting
a Schottky diode across the load. The diode is forward biased
only when the load is switched off. The Schottky diode
clamps negative transients to a few volts. This protects the
MOSFET from drain-to-source breakdown and prevents the
transient from damaging the charge pump by way of the boost
capacitor. Also see Sense Pin Considerationsbelow.
相關(guān)PDF資料
PDF描述
MIC5021BM Replaced by PTN78060W :
MIC5021BN Replaced by PTN78060W :
MIC5031 High-Speed High-Side MOSFET Driver(高速高邊MOS場效應(yīng)管驅(qū)動(dòng)器)
MIC5031BM High-Speed High-Side MOSFET Driver
MIC50398 Replaced by PTN78060W,PTN78060H :
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MIC5021_05 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:High-Speed High-Side MOSFET Driver
MIC5021BM 功能描述:IC DRIVER MOSFET HISIDE HS 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5021BM TR 功能描述:IC DRIVER MOSFET HISIDE HS 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5021BN 功能描述:IC DRIVER MOSFET HI SIDE HS 8DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
MIC5021YM 功能描述:功率驅(qū)動(dòng)器IC High Speed High Side MOSFET Driver - Lead Free RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube