參數(shù)資料
型號(hào): MIC5021BM
廠商: MICREL INC
元件分類(lèi): 功率晶體管
英文描述: Replaced by PTN78060W :
中文描述: BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝: SOIC-8
文件頁(yè)數(shù): 9/9頁(yè)
文件大?。?/td> 132K
代理商: MIC5021BM
October 1998
5-177
MIC5021
Micrel
5
Remote Overcurrent Limiting Reset
In circuit breaker applications where the MIC5021 maintains
an off condition after an overcurrent condition is sensed, the
C
T
pin can be used to reset the MIC5021.
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
TTL Input
10k to
100k
R
SENSE
N-Channel
Power
MOSFET
+12V to +20V
MIC5021
1
2
3
4
8
7
6
5
10μF
0.01
μF
L
74HC04
(example)
2N3904
Q1
Retry (H)
Maintained (L)
Figure 11. Remote Control Circuit
Switching Q1 on pulls C
T
low which keeps the MIC5021
GATE
output off when an overcurrent is sensed. Switching Q1 off
causes C
T
to appear open. The MIC5021 retries in about
20
μ
s and continues to retry until the overcurrent condition is
removed.
For demonstration purposes, a 680
load resistor and 3
sense resistor will produce an overcurrent condition when the
load’s supply (V+) is approximately 12V or greater.
Low-Temperature Operation
As the temperature of the MIC5021AJB (extended tempera-
ture range version—no longer available) approaches –55
°
C,
the driver’s off-state, gate-output offset from ground in-
creases. If the operating environment of the MIC5021AJB
includes low temperatures (–40
°
C to –55
°
C), add an external
2.2M
resistor as shown in Figures 12a or 12b. This assures
that the driver’s gate-to-source voltage is far below the
external MOSFET’s gate threshold voltage, forcing the
MOSFET fully off.
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
TTL Input
R
SENSE
+12V to +36V
MIC5021AJB
1
2
3
4
8
7
6
5
10μF
2.7
nF
L
2.2M
add resistor for
–40
°
C to –55
°
C
operation
Figure 12a. Gate-to-Source Pull Down
The gate-to-source configuration (refer to Figure 12a) is
appropriate for resistive and inductive loads. This also
causes the smallest decrease in gate output voltage.
V
DD
Input
C
T
Gnd
V
BOOST
Gate
Sense
Sense
TTL Input
R
SENSE
+12V to +36V
MIC5021AJB
1
2
3
4
8
7
6
5
10μF
2.7
L
2.2M
add resistor for
–40
°
C to –55
°
C
operation
Figure 12b. Gate-to-Ground Pull Down
The gate-to-ground configuration (refer to Figure 12b) is
appropriate for resistive, inductive, or capacitive loads. This
configuration will decrease the gate output voltage slightly
more than the circuit shown in Figure 12a.
相關(guān)PDF資料
PDF描述
MIC5021BN Replaced by PTN78060W :
MIC5031 High-Speed High-Side MOSFET Driver(高速高邊MOS場(chǎng)效應(yīng)管驅(qū)動(dòng)器)
MIC5031BM High-Speed High-Side MOSFET Driver
MIC50398 Replaced by PTN78060W,PTN78060H :
MIC50398CN Replaced by PTN78060W,PTN78060H :
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