參數(shù)資料
型號: MIC5031BM
廠商: MICREL INC
元件分類: 功率晶體管
英文描述: High-Speed High-Side MOSFET Driver
中文描述: BUF OR INV BASED MOSFET DRIVER, PDSO16
封裝: SOIC-16
文件頁數(shù): 3/8頁
文件大?。?/td> 88K
代理商: MIC5031BM
August 1999
3
MIC5031
MIC5031
Absolute Maximum Ratings
Supply Voltage (V
DD
) ..................................................+36V
Enable Input Voltage (V
EN
) .........................................+36V
Control Input Voltage (V
CTL
)
V
DD
15V..................................................................V
DD
V
DD
> 15V ...............................................................+15V
Flag Output Voltage (V
FLG
).........................................+36V
Reference Voltage Input (V
RV
)....................................+36V
Junction Temperature (T
J
) ........................................ 150
°
C
Micrel
Electrical Characteristics
V
DD
= 12V; C
B
= 0.1
μ
F, CP1 = CP2 = 0.01
μ
F; T
A
= 25
°
C; unless noted
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
DD
Supply current
V
EN
= 0V, V
CTL
= 0V
V
EN
= 12V, V
CTL
= 0V
V
EN
= 12V, V
CTL
= 5V
V
DD
= –12V
0.3
3
μ
A
1.0
mA
0.72
mA
I
DDR
V
CTL
V
CTLH
I
CTL
V
EN
I
EN
V
IOS
I
RV
t
SHDL
V
G
t
DLR
t
R
t
DLF
t
F
V
OLTH
T
OT
T
OTH
f
CP
V
FLG
Reverse voltage leakage current
–0.2
–5
μ
A
Control input voltage threshold
1.55
V
Control input voltage hysteresis
0.2
0.5
1.0
V
Control input current
0.1
1
μ
A
Enable input voltage threshold
6
V
Enable input current
0.1
1
μ
A
Overcurrent comparator offset
±
5
mV
Current limit reference current
R
RI
= 12.0k
C
DLY
= 50pF
V
EN
= 12V, V
CTL
= 5V
V
EN
= 12V, C
L
= 1000p
C
L
= 1000pF
C
L
= 1000pF
C
L
= 1000pF
V
EN
= 12V, V
CTL
= 0V
V
EN
= 12V, V
CTL
= 5V
V
EN
= 12V, V
CTL
= 5V
V
DD
= 5V,
Note 1
open load error, I
FLG
= 2mA (sink)
97
100
103
μ
A
Overcurrent shut down delay
16
μ
s
Gate drive voltage
25
V
Gate turn-on delay
420
ns
Gate rise time
90
ns
Gate turnoff delay
300
ns
Gate fall time
50
ns
Open-load threshold voltage
6.3
V
Overtemperature shut down
140
°
C
Overtemp. shut down hysteresis
10
°
C
Charge pump frequency
190
kHz
Flag active voltage
0.2
V
General Note:
Devices are ESD protected; however, handling precautions are recommended.
Note 1:
Oscillator burst mode at V
DD
5.2V.
Operating Ratings
Supply Voltage (V
DD
) ................................... +4.5V to +30V
Ambient Temperature Range (T
A
)
A-temperature range ............................ –55
°
C to +125
°
C
B-temperature range .............................. –40
°
C to +85
°
C
Package Thermal Resistance (
θ
JA
)
SOIC .................................................................115
°
C/W
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