參數(shù)資料
型號: MIC833BM5
廠商: MICREL INC
元件分類: 運(yùn)動控制電子
英文描述: 30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
中文描述: COMPARATOR, PDSO5
封裝: SOT-23, 5 PIN
文件頁數(shù): 5/8頁
文件大?。?/td> 35K
代理商: MIC833BM5
January 2000
5
MIC833
MIC833
Applications Information
Output
Since the MIC833 output is an open-drain MOSFET, most
applications will require a pull-up resistor. The value of the
resistor should not be too large or leakage effects may
dominate. 470k
is the maximum recommended value. Note
that the output may be pulled up as high as 6V regardless of
IC supply voltage. See
Electrical Characteristics.
Programming the Thresholds
The low-voltage threshold is calculated using:
Micrel
drain to 3.1V. Using 3.1V for the V
IN(lo)
threshold allows
calculation of the two remaining resistor values.
V
3.1V
1.24
1M
+
R2
344k
IN(lo)
=
=
R2
56k
(
=
1M
R2 R3
R1
)
=
R1 600k
The accuracy of the resistors can be chosen based upon the
accuracy required by the system.
The inputs may be subjected to voltages as high as 6V steady
state without adverse effects of any kind, regardless of the IC
supply voltage. This applys even if the supply voltage is zero.
This permits the situation in which the IC supply is turned off,
but voltage is still present on the inputs. See
Electrical
Characteritics.
Input Transients
The MIC833 is inherently immune to very short negative-
going
glitches.
Very brief transients may exceed the V
IN(lo)
threshold without tripping the output.
As shown in Figure 2, the narrower the transient, the deeper
the threshold overdrive that will be ignored by the MIC833.
The graph represents the typical allowable transient duration
for a given amount of threshold overdrive that will not toggle
the output.
0
20
40
60
80
100
120
140
1
10
100
1000
M
μ
s
RESET COMP. OVERDRIVE, V
REF
V
LTH
(mV)
Input Transient
Response
Figure 2. Input Transient Response
Initialization Behavior
When the MIC833 is powered up, the comparators and latch
become active before the reference voltage reaches its final
value. In most applications, this presents no problems. How-
ever, the user should be aware of this: when applying power
to the part, if the input voltage is betweenthe two thresholds,
the output of the part will be highbecause input HTH will have
been higher than the 1.24V reference during initialization.
It is not very likely the part would be powered up in this state;
it is more likely the same power supply will power the part and
develop its inputs. However, if the above-described condition
should occur, the next HTH threshold crossing would notbe
processed; that is, the latch would have been already set. The
next valid input condition would have to be a crossing of the
LTH threshold, which resets the latch, after which
normal
operation is restored.
V
V
R1 R2 R3
R2 R3
IN(lo)
REF
=
The high-voltage threshold is calculated using:
V
V
R1 R2 R3
R3
IN(hi)
REF
=
where, for both equations:
V
1.240V
REF
=
In order to provide the additional criteria needed to solve for
the resistor values, the resistors can be selected such that
they have a given total value, that is, R1 + R2 + R3 = R
TOTAL
.
A value such as 1M
for R
TOTAL
is a reasonable value
because it draws minimum current but has no significant
effect on accuracy.
When working with large resistors, a small amount of leakage
current can cause voltage offsets that degrade system accu-
racy. The maximum recommended total resistance from V
IN
to ground is 3M
.
V
IN
V
DD
HTH
OUT
VDD
LTH
GND
MIC833
604k
1%
56k
1%
340k
1%
470k
R1
R2
R3
V
OUT
5
3
1
4
2
Figure 1. Example Circuit
Once the desired trip points are determined, set the V
IN(hi)
threshold first.
For example, use a total of 1M
= R1 + R2 + R3. For a typical
single-cell lithium ion battery, 3.6V is a good
high threshold
because at 3.6V the battery is moderately charged. Solving
for R3:
V
3.6V
1.241M
R3
IN(hi)
=
=
R3
344k
=
Once R3 is determined, the equation for V
IN(lo)
can be used
to determine R2. A single lithium-ion cell, for example, should
not be discharged below 2.5V. Many applications limit the
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