參數(shù)資料
型號: MIG150J7CSB1W
廠商: Toshiba Corporation
英文描述: TOSHIBA Intelligent Power Module Silicon N Channel IGBT
中文描述: 東芝智能功率模塊IGBT的硅?頻道
文件頁數(shù): 8/11頁
文件大?。?/td> 186K
代理商: MIG150J7CSB1W
MIG150J7CSB1W
2001-11-13
8
100
1
0
50
100
200
3
30
150
Common cathode
:Tj = 25°C
:Tj = 125°C
Irr
10
trr
0
0
1
3
2
4
Common cathode
:Tj = 25°C
:Tj = 125°C
50
100
150
200
300
250
10
0.01
0
50
200
0.1
1
Tj = 125°C
VCC 300 V
VD 15 V
L-Load
ton
toff
tc (on)
tc (off)
0.03
0.05
0.3
0.5
3
5
100
150
10
0.01
0
50
200
0.1
1
Tj = 25°C
VCC 300 V
VD 15 V
L-Load
ton
toff
tc (on)
tc (off)
0.03
0.05
0.3
0.5
3
5
100
150
300
0
0
1
3
4
50
100
200
2
150
VD 17 V
Common emitter
Tj = 125°C
13 V
15 V
250
300
0
0
1
3
4
50
100
200
2
150
VD 17 V
Common emitter
Tj = 25°C
13 V
15 V
250
F
F
S
Collector-emitter voltage VCE (V)
I
C
– V
CE
C
Collector-emitter voltage VCE (V)
I
C
– V
CE
C
Collector current IC (A)
Switching time – I
C
S
Collector current IC (A)
Switching time – I
C
Forward voltage V
F
(V)
I
F
– V
F
Forward current I
F
(A)
t
rr
, I
rr
– I
F
P
P
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