參數(shù)資料
型號(hào): MIG300Q101H
廠商: Toshiba Corporation
英文描述: Intelligent Power Module Silicon N Channel IGBT
中文描述: 智能功率模塊IGBT的硅?頻道
文件頁數(shù): 3/8頁
文件大?。?/td> 182K
代理商: MIG300Q101H
MIG300Q101H
2001-05-29
3
b. Control Stage
(T
j
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Control circuit current
I
D
V
D
= 15V
20
30
mA
Input on signal voltage
V
IN
(on)
V
D
= 15V, I
C
= 300mA
0.9
1.1
1.3
V
Protection
I
FO
(on)
8
10
12
Fault output
current
Normal
I
FO
(off)
V
D
= 15V
1
mA
Over current protection trip level
OC
V
D
= 15V, T
j
= 125°C
420
600
A
Short circuit protection trip level
SC
V
D
= 15V, T
j
= 125°C
630
900
A
Over current cut
off time
t
off
(OC)
V
D
= 15V
10
μs
Trip level
OT
111
118
125
Over
temperature
protection
Reset level
OTr
Case temperature
100
°C
Trip level
UV
11.3
12.0
12.7
Control supply
under voltage
protection
Reset level
UVr
11.8
12.5
13.2
V
Fault output pulse width
t
FO
V
D
= 15V
1
2
3
ms
c. Thermal Resistance
(T
j
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
IGBT
0.078
Junction to case thermal
resistance
R
th
(j
c)
FRD
0.25
°C / W
Case to fin thermal resistance
R
th
(c
f)
Compound is applied
0.03
°C / W
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