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參數(shù)資料
| 型號： | MIG50J7CSB1W |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 186K |
| 代理商： | MIG50J7CSB1W |
MIG50J7CSB1W
2002-09-25
5
2. Brake stage
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Tj 25°C
1
Collector cut-off current
I
CEX
V
CE
600 V
Tj 125°C
10
mA
Tj 25°C
1.8
2.2
Collector-emitter saturation voltage
V
CE (sat)
V
D
15 V
I
C
50 A
V
IN
15 V
0 V
Tj 125°C
2.0
V
Tj 25°C
1
Reverse current
I
R
V
R
= 600 V
Tj 125°C
10
mA
Forward voltage
V
F
I
F
50 A, Tj 25°C
1.5
1.9
2.3
V
t
on
1.3
1.8
t
c (on)
0.65
t
rr
0.8
t
off
1.1
2.1
Switching time
t
c (off)
V
CC
300 V, I
C
50 A
V
D
15 V, V
IN
15 V
Tj 25°C, Inductive load
0 V
(Note 1)
0.2
s
Note 1: Switching time test circuit & timing chart
3. Control stage
(Tj 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
High side
Low side
I
D (H)
I
D (L)
V
IN (on)
V
IN (off)
I
FO (on)
I
FO (off)
13
52
17
68
Control circuit current
V
D
15 V
mA
Input on signal voltage
1.4
1.6
1.8
Input off signal voltage
V
D
15 V
2.2
2.5
2.8
V
Protection
10
12
Fault output current
Normal
V
D
15 V
0.1
mA
Inverter
80
Over current protection
trip level
Brake
OC
V
D
15 V, Tj
125°C
80
A
Inverter
80
Short circuit protection trip
level
Brake
SC
V
D
15 V, Tj
125°C
80
A
Over cuttent cut-off time
t
off (OC)
OT
V
D
15 V
5
s
Trip level
110
118
125
Over temperature
protection
Reset level
OTr
Case temperature
98
°C
Trip level
UV
11.0
12.0
12.5
Control supply under
voltage protection
Reset level
UVr
12.0
12.5
13.0
V
Fault output pulse width
t
FO
V
D
15 V
1
2
3
ms
4. Thermal resistance
(Tc 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Inverter IGBT
0.360
Inverter FRD
0.550
Brake IGBT
0.360
Junction to case thermal resistance
R
th (j-c)
Brake FRD
0.600
°C/W
Case to fin thermal resistance
R
th (c-f)
Compound is applied
0.017
°C/W
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