參數(shù)資料
型號: MJ10000
廠商: 永盛國際集團
元件分類: 基準電壓源/電流源
英文描述: RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述: 抗輻射高效,5安培開關(guān)穩(wěn)壓器
文件頁數(shù): 1/8頁
文件大?。?/td> 212K
代理商: MJ10000
1
Motorola Bipolar Power Transistor Device Data
The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
100 C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times With Inductive Loads —
210 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents
— Peak (1)
IBM
5
Total Power Dissipation @ TC = 25 C
PD
175
Watts
Purposes: 1/8
from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10000/D
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 VOLTS
175 WATTS
CASE 1–07
TO–204AA
(TO–3)
100
15
REV 4
相關(guān)PDF資料
PDF描述
MJ10000 POWER TRANSISTORS(20A,350-400V,175W)
MJ10005 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
MJ10005 SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
MJ10005 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
MJ10005 NPN SILICON POWER DARLINGTON TRANSISTORS
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