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參數(shù)資料
| 型號： | MJ10005 |
| 廠商： | 永盛國際集團 |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關穩(wěn)壓器 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 229K |
| 代理商： | MJ10005 |
6
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions
shown.
50
4
Figure 11. Forward Bias Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
10
5
2
1
0.5
0.1
0.05
0.02
0.01
6
10
20
40
400
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
60
0.005
I
TC = 25
°
C
dc
0.2
100
200
350
100
μ
s
10
μ
s
20
0
Figure 12. Reverse Bias Switching
Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
16
12
0
500
4
I
8
300
400
100
200
VBE(off) = 5 V
VBE(off) = 2 V
TURN OFF LOAD LINE
BOUNDARY FOR MJ10005.
THE LOCUS FOR MJ10004
1 ms
5 ms
MJ10005
VBE(off) = 0 V
TJ
100
°
C
20
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 11 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 11 may be found at any case tem-
perature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as VCEX(sus) at a given collector current
and represents a voltage–current condition that can be sus-
tained during reverse biased turn–off. This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode. Figure 12 gives the complete
reverse bias safe operating area characteristics.
100
80
60
20
0
0
40
80
120
200
Figure 13. Power Derating
TC, CASE TEMPERATURE (
°
C)
P
THERMAL DERATING
SECOND BREAKDOWN
DERATING
160
40
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10005 | 制造商:UNBRANDED 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ10006 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 10 Amp Darlington Transistor |
| MJ10007 | 制造商:ON Semiconductor 功能描述:Trans Darlington NPN 400V 10A 3-Pin(2+Tab) TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:150W; DC Collector Current:10A; DC Current Gain hFE:30; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10007 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
| MJ10008 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 10 Amp Darlington Transistor |
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