參數(shù)資料
型號: MJ10009
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS
中文描述: 20 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù): 2/8頁
文件大?。?/td> 235K
代理商: MJ10009
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
(IC = 2 A, Vclamp = Rated VCEX, TC = 100 C, VBE(off) = 5 V)
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150 C)
ICEV
500
mAdc
(VCE = Rated VCEV, RBE = 50
, TC = 100 C)
5
Emitter Cutoff Current
IEBO
175
mAdc
(IC = 5 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 500 mAdc, TC = 100 C)
VCE(sat)
40
30
400
300
Vdc
Base–Emitter Saturation Voltage
VBE(sat)
2.5
Vdc
(IF = 10 Adc)
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
hfe
8
(VCC = 250 Vdc, IC = 10 A,
IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25
s
(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(1)
Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: PW = 300
μ
s, Duty Cycle
2%.
相關(guān)PDF資料
PDF描述
MJ10009 SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
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