- 您現(xiàn)在的位置：買賣IC網 > PDF目錄371112 > MJ10012 (Boca Semiconductor Corp.) NPN SILICON POWER DARLINGTON TRANSISTORS PDF資料下載
參數(shù)資料
| 型號： | MJ10012 |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | NPN SILICON POWER DARLINGTON TRANSISTORS |
| 中文描述： | NPN硅功率達林頓晶體管 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 191K |
| 代理商： | MJ10012 |
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
MIN
1.550 REF
–––
0.250
0.038
0.055
0.430 BSC
0.215 BSC
0.440
0.665 BSC
–––
0.151
1.187 BSC
0.131
MAX
MIN
39.37 REF
–––
6.35
0.97
1.40
10.92 BSC
5.46 BSC
11.18
16.89 BSC
–––
3.84
30.15 BSC
3.33
MAX
MILLIMETERS
INCHES
1.050
0.335
0.043
0.070
26.67
8.51
1.09
1.77
0.480
12.19
0.830
0.165
21.08
4.19
0.188
4.77
A
N
E
C
K
–T–
SEATING
2 PL
0.13 (0.005)
D
M
Q
M
Y
M
T
M
Y
M
0.13 (0.005)
T
–Q–
–Y–
2
1
U
L
G
B
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
CASE 340D–01
SOT 93, TO–218 TYPE
ISSUE A
STYLE 1:
PIN 1.
BASE
COLLECTOR
EMITTER
COLLECTOR
2.
3.
4.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
V
G
K
S
L
U
B
Q
E
C
J
H
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
MIN
19.00
14.00
4.20
1.00
1.45
5.21
2.60
0.40
28.50
14.70
4.00
17.50
3.40
1.50
MAX
19.60
14.50
4.70
1.30
1.65
5.72
3.00
0.60
32.00
15.30
4.25
18.10
3.80
2.00
MIN
0.749
0.551
0.165
0.040
0.058
0.206
0.103
0.016
1.123
0.579
0.158
0.689
0.134
0.060
MAX
0.771
0.570
0.185
0.051
0.064
0.225
0.118
0.023
1.259
0.602
0.167
0.712
0.149
0.078
INCHES
MILLIMETERS
1
2
3
4
相關PDF資料 |
PDF描述 |
|---|---|
| MJ10012 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| MJH10012 | POWER TRANSISTORS DARLINGTON NPN SILICON |
| MJ10012 | POWER TRANSISTORS DARLINGTON NPN SILICON |
| MJ10012 | POWER TRANSISTORS(10A,400V,175W) |
| MJ10015 | 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10012 | 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR |
| MJ10013 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,550-600V,175W) |
| MJ10014 | 制造商:undefined 功能描述: |
| MJ10015 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:-30A; DC Current Gain hFE:1000; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10015 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
發(fā)布緊急采購，3分鐘左右您將得到回復。