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參數(shù)資料
| 型號： | MJ10012 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS DARLINGTON NPN SILICON |
| 中文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 191K |
| 代理商： | MJ10012 |
4
Motorola Bipolar Power Transistor Device Data
Figure 9. Thermal Response
t, TIME (ms)
1
0.01
0.5
0.2
0.1
0.07
0.05
0.03
0.02
0.01
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC =
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
r
R
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
2,000
500
0.7
0.3
1,000
50
5
Figure 10. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
10
5
2
1
0.2
0.1
0.005
50
70 100
200
500
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
300
0.01
I
MJH10012
TC = 25
°
C
MJ10012
dc
5.0 ms
1.0 ms
100
μ
s
10
20
30
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TC = 25 C, TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 11.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
Figure 11. Power Derating
Figure 12. Usage Test Circuit
t1 to be selected such that IC reaches 6 Adc before switch-off.
NOTE: “Usage Test,” Figure 12 specifies energy handling
capabilities in an automotive ignition circuit.
100
80
60
20
0
0
40
80
120
200
TC, CASE TEMPERATURE (
°
C)
P
THERMAL DERATING
SECOND BREAKDOWN
DERATING
160
MJH10012
MJ10012
20
1.5
10 mH
STANCORE
C2688
VZ = 400 V
T.U.T.
0.3
μ
F
10 Vdc
VCC = 12 Vdc
0 Vdc
t1
5 ms
220
1N4933
2N5881
27
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| MJ10012 | POWER TRANSISTORS(10A,400V,175W) |
| MJ10015 | 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS |
| MJ10016 | NPN SILICON POWER DARLINGTON TRANSISTORS |
| MJ10015 | NPN SILICON POWER DARLINGTON TRANSISTORS |
| MJ10016 | 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10012 | 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR |
| MJ10013 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,550-600V,175W) |
| MJ10014 | 制造商:undefined 功能描述: |
| MJ10015 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:-30A; DC Current Gain hFE:1000; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10015 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
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