參數(shù)資料
型號: MJ10012
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTORS(10A,400V,175W)
中文描述: 功率晶體管(10A條,為400V,175W的)
文件頁數(shù): 3/6頁
文件大小: 191K
代理商: MJ10012
3
Motorola Bipolar Power Transistor Device Data
,
I
μ
V
V
Figure 3. DC Current Gain
Figure 4. Collector Saturation Region
3
0.002
IB, BASE CURRENT (AMP)
0.5
0.005
0.01
0.02
0.05
1
2
2.5
2
1.5
1
TJ = 25
°
C
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Cutoff Region
103
102
101
100
10–1
IC = ICES
25
°
C
REVERSE
–0.2
FORWARD
Figure 5. Collector–Emitter Saturation Voltage
2.2
IC, COLLECTOR CURRENT (AMP)
0.20.1
1.8
1.4
1
0.6
Figure 6. Base–Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.8
2.4
2
1.6
1.2
IC = 0.5 A
10 A
3
IC/IB = 5
– 30
°
C
25
°
C
150
°
C
25
°
C
TJ = – 30
°
C
VBE(sat) @ IC/IB = 5
VBE(on) @ VCE = 6 V
0.1
0.3
0.5
0.7
1
2
5
7
3
10
VCE = 250 V
TJ = 150
°
C
75
°
C
0
+0.2
+0.4
+0.8
+0.6
6
0.2
0.1
0.5
TJ = 150
°
C
V
V
1
2
0.3
5
7
10
0.2
3
0.7
0.5
0.2
10
7
5
Figure 7. Turn–Off Switching Time
IC, COLLECTOR CURRENT (AMP)
3
2
1
0.5
0.1
0.5 0.7
TJ = 25
°
C
IC/IB = 20
VCE = 12 Vdc
0.3
0.2
t
μ
tf
ts
0.2
0.3
1
2
5
7
3
10
20
0.7
2000
0.1
IC, COLLECTOR CURRENT (AMP)
20
0.2
0.3
0.5 0.7
1
2
3
5
10
700
500
100
70
50
30
h
TJ = 150
°
C
25
°
C
30
°
C
VCE = 3 Vdc
VCE = 6 Vdc
200
300
1000
7
25
°
C
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