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參數(shù)資料
| 型號： | MJ10012G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | GREEN, TO-3, 2 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 80K |
| 代理商： | MJ10012G |
MJ10012 MJH10012
http://onsemi.com
5
Figure 9. Thermal Response
t, TIME (ms)
1
0.01
0.5
0.2
0.1
0.05
0.03
0.01
RθJC(t) = r(t) RθJC
RθJC = °C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
r(t
),TRAN
SIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
2,000
500
0.7
0.3
0.07
0.02
1,000
50
5
Figure 10. Forward Bias Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
10
5
2
1
0.2
0.1
0.005
50 70 100
200
500
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
300
0.01
I C
,COLLECT
OR
CURRENT
(AMP)
MJH10012
TC = 25°C
MJ10012
dc
5.0 ms
1.0 ms
100 s
10
20 30
The data of Figure 10 is based on TC = 25
_C, TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25
_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found at
any case temperature by using the appropriate curve on
Figure 11.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
TJ(pk) may be calculated from the data in Figure 11. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
Figure 11. Power Derating
Figure 12. Usage Test Circuit
t1 to be selected such that IC reaches 6 Adc before switch-off.
NOTE: “Usage Test,” Figure 12 specifies energy handling
capabilities in an automotive ignition circuit.
100
80
60
20
0
40
80
120
200
TC, CASE TEMPERATURE (°C)
THERMAL DERATING
SECOND BREAKDOWN
DERATING
160
MJH10012
MJ10012
20
1.5
10 mH
STANCORE
C2688
VZ = 400 V
T.U.T.
0.3
F
10 Vdc
VCC = 12 Vdc
0 Vdc
t1
5 ms
220
1N4933
2N5881
27
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10013 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(10A,550-600V,175W) |
| MJ10014 | 制造商:undefined 功能描述: |
| MJ10015 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 400V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 400V, TO-3 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:250W; DC Collector Current:-30A; DC Current Gain hFE:1000; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10015 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
| MJ10016 | 制造商:NTE Electronics 功能描述:transistor bipolar Darlington 500v to 204e 制造商:NTE Electronics 功能描述:TRANSISTOR 制造商:Solid State Devices Inc (SSDI) 功能描述:TRANSISTOR DARLING NPN 500V TO-3 制造商:SOLID STATE 功能描述:TRANSISTOR, DARLING, NPN, 500V, TO-3 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, NPN, 500V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Power Dissipation Pd:250W; DC Collector Current:50A; DC Current Gain hFE:25; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 500V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Power Dissipation Pd:250W; DC Collector Current:50A; DC Current Gain hFE:25; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans Darlington NPN 700V 50A 3-Pin(2+Tab) TO-3 |
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