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參數(shù)資料
| 型號(hào)： | MJ10016 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON POWER DARLINGTON TRANSISTORS |
| 中文描述： | 50 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | MJ10016 |
3
Motorola Bipolar Power Transistor Device Data
V
–0.2
VBE, BASE–EMITTER VOLTAGE (VOLTS)
0
2.8
IC, COLLECTOR CURRENT (AMP)
2.4
2.0
1.6
1.2
IC/IB = 10
100
0.5
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
5.0
1.0
2.0
5.0
10
20
50
50
10
20
Figure 2. Collector–Emitter Saturation Voltage
0.5
IC, COLLECTOR CURRENT (AMP)
0.4
2.0
5.0
1.2
0.8
h
TC = 25
°
C
VCE = 5.0 V
10
20
50
Figure 3. Base–Emitter Saturation Voltage
+0.2
0.5
1.0
2.0
10
50
20
5.0
Figure 4. Collector Cutoff Region
2.4
2.0
1.6
Figure 5. Output Capacitance
1500
0.4
VR, REVERSE VOLTAGE (VOLTS)
100
10
1000
100
400
C
200
FORWARD
0.8
VCE = 250 V
75
°
C
100
°
C
REVERSE
25
°
C
TJ = 125
°
C
1.0
4.0
40
300
500
TJ = 150
°
C
TJ = 25
°
C
104
103
102
101
100
10–1
,
o
1.0
,
I
μ
V
IC/IB = 10
TJ = 150
°
C
TJ = 25
°
C
+0.4
+0.6
+0.8
TJ = 25
°
C
TYPICAL CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10016 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 500V TO-3 |
| MJ10016 | 制造商:NTE Electronics 功能描述:DARLINGTON BIPOLAR TRANSISTOR |
| MJ1001F | 制造商:Ohmite Mfg Co 功能描述:Res Metal Film 1K Ohm 1% 1/8W ±50ppm/°C Conformal AXL Thru-Hole Ammo Pack |
| MJ1001FE | 制造商:Ohmite Mfg Co 功能描述:Resistor;Metal Film;Res 1 Kilohms;Pwr-Rtg 0.125 W;Tol 1%;Axial;Epoxy |
| MJ10020 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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