參數(shù)資料
型號： MJ11017
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
中文描述： 15 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù)： 1/6頁
文件大?。?/td> 235K
代理商： MJ11017
1
Motorola Bipolar Power Transistor Device Data
"
!
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)
Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) – MJ11018, 17
VCEO(sus)
= 250 Vdc (Min) – MJ11022, 21
Low Collector–Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
VCE(sat)
= 1.8 V (Typ) @ IC = 10 A
100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
Rating
Collector–Emitter Voltage
Symbol
VCEO
MJ11017
150
MJ11021
250
Unit
Vdc
Derate Above 25 C
175
Watts
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (
°
C)
50
75
100
125
200
200
50
P
100
0
150
175
25
0
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11017/D
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60–120 VOLTS
200 WATTS
*Motorola Preferred Device
CASE 1–07
TO–204AA
(TO–3)
相關(guān)PDF資料
PDF描述
MJ11017 Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
MJ11022 Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
MJ11017 DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON
MJ11021 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
MJ11022 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ11018 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(15A,150-250V,175W)
MJ11019 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor
MJ11020 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
MJ11021 功能描述:達林頓晶體管 30A 250V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJ11021_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Silicon Power Transistors
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