參數(shù)資料
型號(hào)： MJ11017
廠商： 永盛國(guó)際集團(tuán)
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
中文描述： 雙通道高效率，低噪聲，同步降壓型開(kāi)關(guān)穩(wěn)壓器
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 235K
代理商： MJ11017
2
Motorola Bipolar Power Transistor Device Data
(IC = 0. 1 Adc, IB = 0)
MJ11017, MJ11018
(VCE = 125, IB = 0)
Collector Cutoff Current
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter On Voltage
IC = 10 A, VCE = 5.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
150
—
MJ11021, MJ11022
ICEV
—
1.0
mAdc
IEBO
—
—
5.0
2.0
mAdc
hFE
—
VCE(sat)
100
—
Vdc
—
2.8
Vdc
Cob
pF
Small–Signal Current Gain
MJ11017, MJ11021
hfe
—
75
600
—
—
tf
s
μ
s
μ
s
Rise Time
VBE(off) = 50 V) (See Figure 2.)
1.2
0.5
Storage Time
Fall Time
(1) Pulsed Test: Pulse Width = 300
s, Duty Cycle
4.4
10.0
2.7
2.5
2%.
Figure 2. Switching Times Test Circuit
V2
APPROX
+12 V
V1
APPROX
–8.0 V
0
tr, tf
≤
10 ns
DUTY CYCLE = 1.0%
25
μ
s
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
VCC
100 V
RC
SCOPE
TUT
RB
D1
51
+4.0 V
≈
10 K
≈
8.0
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
相關(guān)PDF資料
PDF描述
MJ11022 Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
MJ11017 DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON
MJ11021 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
MJ11022 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
MJ11017 POWER TRANSISTORS(15A,150-250V,175W)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ11018 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(15A,150-250V,175W)
MJ11019 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor
MJ11020 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
MJ11021 功能描述:達(dá)林頓晶體管 30A 250V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJ11021_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Silicon Power Transistors
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