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參數(shù)資料
| 型號(hào)： | MJ11017 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON |
| 中文描述： | 15 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 235K |
| 代理商： | MJ11017 |
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1.0
0.7
0.01
0.01
0.1
0.07
r
1.0
1.0
100
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC(t) = 0.86
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
SINGLE PULSE
R
1000
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 3. Thermal Response
0.05
0.03
0.02
0.5
0.3
0.2
0.02
0.03 0.05
0.2
0.3
0.5
2.0
3.0
5.0
200 300
500
10
20
30
50
0.1
0.02
0.01
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias Safe
Operating Area (FBSOA)
5.0
10
20
200
3.0
50
100
0.3
0.2
0
0.5
7.0
30
70
150
dc
0.1 ms
3.0
2.0
1.0
5.0
30
20
10
I
TJ = 175
°
C
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25
°
C
SINGLE PULSE
0.5 ms
1.0 ms
5.0 ms
MJ11017, 18
MJ11021, 22
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 175 C, TC is
variable dependIng on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
175 C. TJ(pk) may be calculated from the data in Figure 3.
At high case temperatures thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
20
100
140
260
0
180
220
60
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum RBSOA, Reverse Bias Safe
Operating Area
20
0
10
30
I
L = 200
μ
H
IC/IB1
≥
50
TC = 25
°
C
VBE(off) 0 – 5.0 V
RBE = 47
DUTY CYLE = 10%
MJ11017, 18
MJ11021, 22
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be hold to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 5 gives ROSOA characteristics.
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| MJ11021 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS |
| MJ11022 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS |
| MJ11017 | POWER TRANSISTORS(15A,150-250V,175W) |
| MJ11021 | POWER TRANSISTORS(15A,150-250V,175W) |
| MJ11022 | POWER TRANSISTORS(15A,150-250V,175W) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ11018 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(15A,150-250V,175W) |
| MJ11019 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor |
| MJ11020 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| MJ11021 | 功能描述:達(dá)林頓晶體管 30A 250V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJ11021_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Silicon Power Transistors |
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