參數(shù)資料
型號(hào)： MJ11017
廠商： MOSPEC SEMICONDUCTOR CORP.
英文描述： POWER TRANSISTORS(15A,150-250V,175W)
中文描述： 功率晶體管（第15A ,150 - 250V，175W的）
文件頁數(shù)： 2/6頁
文件大小： 235K
代理商： MJ11017
2
Motorola Bipolar Power Transistor Device Data
(IC = 0. 1 Adc, IB = 0)
MJ11017, MJ11018
(VCE = 125, IB = 0)
Collector Cutoff Current
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter On Voltage
IC = 10 A, VCE = 5.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
150
—
MJ11021, MJ11022
ICEV
—
1.0
mAdc
IEBO
—
—
5.0
2.0
mAdc
hFE
—
VCE(sat)
100
—
Vdc
—
2.8
Vdc
Cob
pF
Small–Signal Current Gain
MJ11017, MJ11021
hfe
—
75
600
—
—
tf
s
μ
s
μ
s
Rise Time
VBE(off) = 50 V) (See Figure 2.)
1.2
0.5
Storage Time
Fall Time
(1) Pulsed Test: Pulse Width = 300
s, Duty Cycle
4.4
10.0
2.7
2.5
2%.
Figure 2. Switching Times Test Circuit
V2
APPROX
+12 V
V1
APPROX
–8.0 V
0
tr, tf
≤
10 ns
DUTY CYCLE = 1.0%
25
μ
s
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
VCC
100 V
RC
SCOPE
TUT
RB
D1
51
+4.0 V
≈
10 K
≈
8.0
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
相關(guān)PDF資料
PDF描述
MJ11021 POWER TRANSISTORS(15A,150-250V,175W)
MJ11022 POWER TRANSISTORS(15A,150-250V,175W)
MJ11030 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
MJ11032 Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
MJ11032 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ11018 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(15A,150-250V,175W)
MJ11019 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistor
MJ11020 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
MJ11021 功能描述:達(dá)林頓晶體管 30A 250V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJ11021_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Silicon Power Transistors
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