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參數(shù)資料
| 型號(hào)： | MJ11029 |
| 廠(chǎng)商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS |
| 中文描述： | 50 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | MJ11029 |
2
Motorola Bipolar Power Transistor Device Data
(IC = 1 00 mAdc, IB = 0)
(VCE = 60 Vdc, RBE = 1 k ohm)
(VCE = 90 Vdc, RBE = 1 k ohm)
(VCE = 60 Vdc, RBE = 1 k ohm, TC = 150 C)
(VCE = 90 Vdc, RBE = 1 k ohm, TC = 150 C)
ON CHARACTERISTICS (1)
DC Current Gain
Collector–Emitter Saturation Voltage
(IC = 25 Adc, IB = 200 mAdc)
MJ11030, MJ11031
90
—
MJ11028, MJ11029
MJ11030, MJ11031
MJ11028, MJ11029
MJ11030, MJ11031
—
—
—
—
2
2
10
2
mAdc
hFE
—
VCE(sat)
400
—
Vdc
—
3.0
I
100
0.2
Figure 2. DC Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
0.5
1
2
5
10
20
50
200
20
10
5
50
2
1
0.5
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
°
C
SECOND BREAKDOWN LIMITED
MJ11028, 29
MJ11030, 31
MJ11032, 33
100
There are two limitations on the power–handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200 C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by se-
cond breakdown.
V
IC, COLLECTOR CURRENT (AMP)
h
100 k
IC, COLLECTOR CURRENT (AMP)
50 k
20 k
10 k
5 k
2 k
500
Figure 3. DC Current Gain
1
2
5
10
100
20
50
Figure 4. “On” Voltage
100
VCE = 5 V
TJ = 25
°
C
1 k
200
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
5
4
3
2
1
1
2
5
10
100
20
50
0
3
TJ = 25
°
C
IC/IB = 100
VBE(sat)
80
μ
s
(PULSED)
MJ11029, MJ11031, MJ11033 PNP
MJ11028, MJ11030, MJ11032 NPN
80
μ
s
(PULSED)
VCE(sat)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJ11032 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS |
| MJ11032 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
| MJ11030 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
| MJ11028 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
| MJ11029 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ11029 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11029G | 功能描述:達(dá)林頓晶體管 50A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJ1102F | 制造商:Ohmite Mfg Co 功能描述: |
| MJ11030 | 功能描述:TRANS DARL NPN 50A 90V TO-3 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱(chēng):MMBT489LT1GOSDKR |
| MJ11030G | 功能描述:達(dá)林頓晶體管 BIP NPN 50A 90V FG RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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