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參數(shù)資料
| 型號： | MJ13333 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | 20 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 278K |
| 代理商： | MJ13333 |
4
Motorola Bipolar Power Transistor Device Data
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 7. Inductive Switching Measurements
Figure 8. Reverse Base Current versus
VBE(off) With No External Base Resistance
2.0
5.0
10
10
7.0
2.0
,
I
0
IC = 10 A
IB1 = 2 A
Vclamp = 250 V
TJ = 25
°
C
5.0
trv
TIME
IC
VCE
IB
90% IB1
tsv
IC pk
Vclamp
90% Vclamp
90% IC
tfi
10% Vclamp
10%
IC pk
2% IC
tti
tc
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 – 90% Vclamp
tfi = Current Fall Time, 90 – 10% IC
tti = Current Tail, 10 – 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms
is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi
tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
°
C and has become a benchmark
for designers, However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100
°
C.
20
Figure 9. Turn–On Switching Times
IC, COLLECTOR CURRENT (AMP)
0.2
0.5
0.02
Figure 10. Turn–Off Switching Times
2.0
1.0
0.1
0.05
20
IC, COLLECTOR CURRENT (AMP)
1.0
0.05
5.0
2.0
1.0
t
μ
0.5
5.0
2.0
10
t
μ
0.5
0.2
0.2
VCC = 250 V
IC/IB = 5
VCE = 250 V
IC/IB = 5
VBE(off) = 5 V
tr
td
0.2
0.5
1.0
5.0
2.0
10
0.1
ts
tf
RESISTIVE SWITCHING PERFORMANCE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ13333 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ13334 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 20 Amp Silicon Transistor NPN |
| MJ13335 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 20 Amp Silicon Transistor NPN |
| MJ-135 BLACK | 制造商:Marushin Electric Mfg 功能描述:Bulk |
| MJ-135 GREY | 制造商:Marushin Electric Mfg 功能描述: |
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