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參數(shù)資料
| 型號： | MJ15004 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS COMPLEMENTARY SILICON |
| 中文描述： | 20 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 119K |
| 代理商： | MJ15004 |
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
—
100
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Baised
5
Adc
(IC = 5 Adc, VCE = 2 Vdc)
Collector Emitter Saturation Voltage
—
1
Vdc
Base Emitter On Voltage
VBE(on)
—
2
Vdc
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
Output Capacitance
—
1000
pF
I
5
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5
7
10
200
10
7
2
2
3
50
70 100
20
30
20
15
1
3
0.5
0.2
0.7
0.3
TC = 25
°
C
150
TJ = 200
°
C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200 C; TC is
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJ15004 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-3 |
| MJ15004G | 功能描述:兩極晶體管 - BJT 20A 140V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15011 | 功能描述:兩極晶體管 - BJT 10A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15011G | 功能描述:兩極晶體管 - BJT 10A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15011G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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