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參數資料
| 型號： | MJ15015 |
| 廠商： | 永盛國際集團 |
| 英文描述： | Silicon Epitaxial Planar Transistor |
| 中文描述： | 硅外延平面晶體管 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MJ15015 |
1
Motorola Bipolar Power Transistor Device Data
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. . . PowerBase complementary transistors designed for high power audio, stepping
motor and other linear applications. These devices can also be used in power
switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or
for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955.
Current–Gain — Bandwidth–Product @ IC = 1.0 Adc
fT= 0.8 MHz (Min) – NPN
Safe Operating Area — Rated to 60 V and 120 V, Respectively
Reversed Biased
Derate above 25 C
0.65
W/ C
Operating and Storage Junction
Temperature Range
–65 to +200
1.03
200
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (
°
C)
MJ15015
MJ15016
D
150
100
50
2N3055A
MJ2955A
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3055A/D
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 120 VOLTS
115, 180 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| MJ15016 | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
| MJ2955A | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJ15015 | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS |
| MJ15016 | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS |
| MJ2955A | POWER TRANSISTORS(15A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ15015G | 功能描述:兩極晶體管 - BJT 15A 120V 180W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15016 | 功能描述:兩極晶體管 - BJT 15A 120V 180W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15016G | 功能描述:兩極晶體管 - BJT 15A 120V 180W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15018 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
| MJ15019 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
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