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參數(shù)資料
| 型號(hào)： | MJ15018 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
| 中文描述： | 4 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | MJ15018 |
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
Collector Cutoff Current
MJ15020, MJ15021
250
—
—
500
μ
Adc
Second Breakdown Collector Current with Base Forward–Biased
ON CHARACTERISTICS (1)
3.0
—
Adc
(IC = 3.0 Adc, VCE = 4.0 V)
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
10
—
—
1.0
Vdc
Base–Emitter on Voltage
VBE(on)
—
2.0
Vdc
Output Capacitance
(VCB = 10 Vdc, IE = 0, Ftest = 1.0 MHz)
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
—
500
pF
2%
Figure 2. DC Current Gain
Figure 3. Maximum Rated Forward Biased
Safe Operating Area
I
5.0
3.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
7.0
10
500
10
2.0
5.0
100
200
20
30
1.0
0.7
0.5
0.3
0.02
0.2
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
300
1.0
3.0
5.0
10
0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPS)
h
TJ = 25
°
C
VCE = 4.0 Vdc
50
100
70
20
2.0
200
MJ15018/19
MJ15020/21
TC = 25
°
C
PNP
50
70
2.0
7.0
0.3
0.7
30
10
7.0
5.0
3.0
0.1
0.07
0.05
0.03
0.01
NPN
TYPICAL DYNAMIC CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ15019 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
| MJ1501F | 制造商:Ohmite Mfg Co 功能描述: |
| MJ15020 | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 250V 4A 3-Pin(2+Tab) TO-3 Tray |
| MJ15020G | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| MJ15021 | 制造商:Motorola Inc 功能描述: |
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