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參數(shù)資料
| 型號(hào)： | MJ21194 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | MJ21194 |
MJ21193 MJ21194
4
Motorola Bipolar Power Transistor Device Data
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SA
TURA
TION
VOL
TAGE
(VOL
TS)
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SA
TURA
TION
VOL
TAGE
(VOL
TS)
Figure 11. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
V
BE(on)
,BASE–EMITTER
VOL
TAGE
(VOL
TS)
Figure 12. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
V
BE(on)
,BASE–EMITTER
VOL
TAGE
(VOL
TS)
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I C
,COLLECT
OR
CURRENT
(AMPS)
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
PNP MJ21193
NPN MJ21194
TYPICAL CHARACTERISTICS
PNP MJ21193
NPN MJ21194
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0
100
10
1.0
0.1
0.2
10
1.0
0.1
100
10
1.0
0.1
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
1000
TJ = 25°C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25°C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25°C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25°C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
1 SEC
TC = 25°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ21194G | 功能描述:兩極晶體管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ21195 | 功能描述:兩極晶體管 - BJT 16A 250V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ21195_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ21195G | 功能描述:兩極晶體管 - BJT 16A 250V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ21196 | 功能描述:兩極晶體管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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