- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371114 > MJD112 (FAIRCHILD SEMICONDUCTOR CORP) D-PAK for Surface Mount Applications PDF資料下載
參數(shù)資料
| 型號： | MJD112 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | D-PAK for Surface Mount Applications |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 306K |
| 代理商： | MJD112 |
5
Motorola Bipolar Power Transistor Device Data
NPN MJD112
PNP MJD117
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0
*APPLIED FOR IC/IB < hFE/3
0.1
0.6
–55
°
C TO 25
°
C
0.4
1
–4.8
2
4
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
–0.4
,
I
μ
103
102
101
100
+0.2 +0.4
+0.6
TJ = 150
°
C
100
°
C
REVERSE
FORWARD
25
°
C
–0.2
VCE = 30 V
105
–0.6
+0.8
+1
+1.2 +1.4
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
+0.4
,
I
μ
103
102
101
100
–0.2
–0.4 –0.6
105
+0.6
+0.2
–0.8
–1
–1.2 –1.4
+0.8
–4
–3.2
–2.4
–1.6
–0.8
θ
VC FOR VBE
25
°
C TO 150
°
C
25
°
C TO 150
°
C
*
θ
VC FOR VCE(sat)
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0.1
0.6
0.4
1
2
4
Figure 10. Temperature Coefficients
Figure 11. Collector Cut–Off Region
Figure 12. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈
8 k
≈
120
PNP
BASE
EMITTER
COLLECTOR
≈
8 k
≈
120
NPN
0
–4.8
+0.8
–4
–3.2
–2.4
–1.6
–0.8
V
θ
°
V
θ
°
–55
°
C TO 25
°
C
*APPLIES FOR IC/IB < hFE/3
*
θ
VC FOR VCE(sat)
θ
VB FOR VBE
25
°
C TO 150
°
C
–55
°
C TO 25
°
C
25
°
C TO 150
°
C
–55
°
C TO 25
°
C
VCE = 30 V
REVERSE
FORWARD
TJ = 150
°
C
100
°
C
25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD112 | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| MJD112L | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| MJD122 | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT |
| MJD122 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| MJD122-1 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD112_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| MJD112_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Darlington Transistor |
| MJD112_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power Darlington transistors |
| MJD112_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Power Transistors |
| MJD112-001 | 功能描述:達林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。