參數(shù)資料
型號(hào)： MJD122
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： Complementary Darlington Power Transistors
中文描述： 8 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 284K
代理商： MJD122
4
Motorola Bipolar Power Transistor Device Data
θ
°
IC, COLLECTOR CURRENT (AMP)
0.2
*IC/IB
≤
hFE/3
0.1
–55
°
C to 25
°
C
1
2
3
10
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
+0.4
,
I
μ
103
102
101
100
–0.2 –0.4
–0.6
TJ = 150
°
C
100
°
C
REVERSE
FORWARD
25
°
C
VCE = 30 V
105
+0.6
+0.2
–0.8
–1
–1.2 –1.4
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
,
I
μ
103
102
101
100
105
+5
–5
θ
VB for VBE
25
°
C to 150
°
C
θ
VC for VCE(sat)
Figure 5. Temperature Coefficients
VR, REVERSE VOLTAGE (VOLTS)
Cib
30
1
5
20
100
TJ = 25
°
C
300
50
70
100
0.1
2
10
50
PNP
NPN
0.5
0.2
Figure 6. Collector Cut–Off Region
Figure 7. Small–Signal Current Gain
1
f, FREQUENCY (kHz)
100
2
10
500
300
5000
3000
2000
TC = 25
°
C
VCE = 4 Vdc
IC = 3 Adc
5
50
20
100
10,000
200
200
500
1000
PNP MJD127
NPN MJD122
–4
–3
–2
–1
0
+4
+3
+2
+1
0.5
0.3
7
5
IC, COLLECTOR CURRENT (AMP)
0.2
0.1
1
2
3
0.5
0.3
7
5
1000
10
50
30
20
PNP
NPN
200
Figure 8. Capacitance
θ
°
+5
–5
–4
–3
–2
–1
0
+4
+3
+2
+1
0.7
10
0
–0.4
+0.2
+0.4 +0.6
–0.6
–0.2
+0.8
+1
+1.2 +1.4
h
C
–55
°
C to 25
°
C
25
°
C to 150
°
C
*IC/IB
≤
hFE/3
25
°
C to 150
°
C
–55
°
C to 25
°
C
25
°
C to 150
°
C
–55
°
C to 25
°
C
*
θ
VC for VCE(sat)
θ
VB for VBE
REVERSE
FORWARD
VCE = 30 V
TJ = 150
°
C
100
°
C
25
°
C
Cob
TYPICAL ELECTRICAL CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD122_05 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Darlington Power Transistor
MJD122_07 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:nullLow voltage power Darlington transistor
MJD122_09 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:NPN Silicon Darlington Transistor
MJD122_11 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Darlington Power Transistor
MJD122-1 功能描述:達(dá)林頓晶體管 NPN PWR Darlington Int Anti Collector RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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