參數(shù)資料
型號(hào): MJD243T4
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Silicon Plastic Power Transistor
中文描述: 4 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 1/6頁
文件大小: 209K
代理商: MJD243T4
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
. . . designed for low voltage, low–power, high–gain audio amplifier applications.
Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain — hFE= 40 (Min) @ IC = 200 mAdc
= 15 (Min) @ IC = 1.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Low Collector–Emitter Saturation Voltage —
VCE(sat)= 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.6 Vdc (Max) @ IC = 1.0 Adc
Collector Current — Continuous
4
8
Adc
Peak
0.1
PD
1.4
Watts
Characteristic
Thermal Resistance, Junction to Case
R
θ
JA
Symbol
Max
10
Unit
C/W
25
25
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
15
10
TC
5
20
P
2.5
0
1.5
1
TA
0.5
2
TC
TA (SURFACE MOUNT)
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD243/D
NPN SILICON
POWER TRANSISTOR
4 AMPERES
100 VOLTS
12.5 WATTS
*Motorola Preferred Device
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
CASE 369A–13
CASE 369–07
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MJD243-1 NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS
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