參數(shù)資料
型號(hào)： MJD253T4
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Complementary Silicon Plastic Power Transistor
中文描述： 4 A, 100 V, PNP, Si, POWER TRANSISTOR
封裝： PLASTIC, CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 124K
代理商： MJD253T4
Semiconductor Components Industries, LLC, 2004
March, 2004 Rev. 8
1
Publication Order Number:
MJD243/D
MJD243 (NPN),
MJD253 (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistor
DPAK3 for Surface Mount Applications
Designed for low voltage, lowpower, highgain audio amplifier
applications.
Features
CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 100 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain
h
FE
= 40 (Min) @ I
C
= 200 mAdc
= 15 (Min) @ I
C
= 1.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 0.3 Vdc (Max) @ I
C
= 500 mAdc
= 0.6 Vdc (Max) @ I
C
= 1.0 Adc
High CurrentGain Bandwidth Product
f
T
= 40 MHz (Min) @ I
C
= 100 mAdc
Annular Construction for Low Leakage
I
CBO
= 100 nAdc @ Rated V
CB
Epoxy Meets UL 94, V0 @ 0.125 in.
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Package is Available
8000 V
400 V
DPAK3
CASE 369D
STYLE 1
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
MARKING DIAGRAMS
Y
WW
J2x3 = Device Code
x
= 4 or 5
= Year
= Work Week
Device
Package
Shipping
ORDERING INFORMATION
DPAK3
DPAK3
CASE 369C
STYLE 1
YWW
J2x3
Preferred
devices are recommended choices for future use
and best overall value.
MJD243
75 Units/Rail
MJD243T4
DPAK3
2500/Tape & Reel
MJD2531
DPAK3
75 Units/Rail
http://onsemi.com
YWW
J2x3
MJD253T4
DPAK3
2500/Tape & Reel
12
3
4
12
3
Base
Collector
Emitter
4
MJD243T4G
DPAK3
(PbFree)
2500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
MJD31 Complementary Power Transistors(補(bǔ)償型功率晶體管)
MJD31C Complementary Power Transistors(補(bǔ)償型功率晶體管)
MJD32 Complementary Power Transistors(互補(bǔ)型功率晶體管)
MJD340 High Voltage Power Transistors(高電壓功率晶體管)
MJD44E3 Darlington Power Transistor(達(dá)林頓功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD253T4G 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD29 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications
MJD2955 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD2955_02 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY POWER TRANSISTORS
MJD2955_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors DPAK For Surface Mount Applications
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