參數(shù)資料
型號(hào)： MJD2955-1
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
中文描述： 10 A, 60 V, NPN, Si, POWER TRANSISTOR
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 202K
代理商： MJD2955-1
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
Derate above 25 C
0.014
W/ C
Operating and Storage Junction
TJ, Tstg
–55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
R
θ
JA
Max
6.25
Unit
C/W
Thermal Resistance, Junction to Ambient (1)
71.4
C/W
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD2955/D
CASE 369A–13
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS
20 WATTS
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 1
相關(guān)PDF資料
PDF描述
MJD3055 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
MJD3055-1 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:12; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
MJD2955T4 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
MJD3055T4 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
MJD3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD2955-1G 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD2955G 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD2955G 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR
MJD2955T4 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD2955T4 制造商:STMicroelectronics 功能描述:Bipolar Transistor
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