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參數(shù)資料
| 型號(hào)： | MJD2955T4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS |
| 中文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 202K |
| 代理商： | MJD2955T4 |
4
Motorola Bipolar Power Transistor Device Data
Figure 6. “On” Voltages, MJD2955
2
0.1
0
0.2 0.3
0.5
1
3
10
0.8
1.6
1.2
V
0.4
5
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 3 V
Figure 7. Switching Time Test Ciruit
Figure 8. Thermal Response
t, TIME (ms)
1
0.01
0.02
0.7
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1
2
5
10
20
50
100
200
500
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 6.25
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.1
0.5
0.2
R
1 k
0.3
0.03
0.03
0.3
3
30
300
IC, COLLECTOR CURRENT (AMP)
2
+11 V
25
μ
s
0
–9 V
RB
–4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf
≤
10 ns
DUTY CYCLE = 1%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.01
Figure 9. Maximum Forward Bias
Safe Operating Area
0.01
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.02
5
3
2
1
10
0.5
0.3
0.1
TJ = 150
°
C
1 ms
dc
0.6
1
2
60
20
40
I
WIRE BOND LIMIT
THERMAL LIMIT TC = 25
°
C (D = 0.1)
SECOND BREAKDOWN LIMIT
10
6
4
500
μ
s
0.03
0.05
100
μ
s
5 ms
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 8. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
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參數(shù)描述 |
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| MJD2955T4 | 制造商:STMicroelectronics 功能描述:Bipolar Transistor |
| MJD2955T4G | 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| MJD29C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
| MJD29CITU | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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