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參數(shù)資料
| 型號： | MJD29 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Epitaxial Silicon Transistor(NPN硅外延晶體管) |
| 中文描述： | 1 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 482K |
| 代理商： | MJD29 |
2000 Fairchild Semiconductor International
Rev. A. February 2000
M
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
Parameter
Value
Units
: MJD29
: MJD29C
40
100
V
V
V
CEO
Collector-Emitter Voltage
: MJD29
: MJD29C
40
100
5
1
3
0.4
15
1.56
150
V
V
V
A
A
A
W
W
°
C
°
C
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
Junction Temperature
Storage Temperature
- 65 ~ 150
Test Condition
Min.
Max.
Units
: MJD29
: MJD29C
I
C
= 30mA, I
B
= 0
40
100
V
V
I
CEO
Collector Cut-off Current
: MJD29
: MJD29C
V
CE
= 40V, I
B
= 0
V
CE
= 60V, I
B
= 0
50
50
μ
A
μ
A
I
CES
Collector Cut-off Current
: MJD29
: MJD29C
V
CE
= 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 0.2A
V
CE
= 4V, I
C
= 1A
I
C
= 1A, I
B
= 125mA
V
CE
= 4A, I
C
= 1A
V
CE
= 10V, I
C
= 200mA
20
20
1
μ
A
μ
A
mA
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
40
15
75
0.7
1.3
V
CE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
V
V
3
MHz
MJD29/29C
General Purpose Amplifier
Low Speed Switching Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I.ACK, “- I” Suffix)
Electrically Similar to Popular TIP29 and TIP29C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD2955 | 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD2955_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY POWER TRANSISTORS |
| MJD2955_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors DPAK For Surface Mount Applications |
| MJD2955_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD2955-001 | 功能描述:兩極晶體管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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