參數(shù)資料
型號(hào): MJD31T4
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
中文描述: 3 A, 40 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 2/6頁
文件大?。?/td> 205K
代理商: MJD31T4
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25 C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
MJD31, MJD32
40
Vdc
(VCE = Rated VCEO, VEB = 0)
MJD31C, MJD32C
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
1
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
hFE
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
Small–Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
(2) fT =
hfe
ftest.
hfe
3
20
MHz
2%.
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MJD31T4G 功能描述:兩極晶體管 - BJT 3A 40V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD31TF 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD32 制造商:Motorola Inc 功能描述:
MJD32/32C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications
MJD32-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS